发明公开
EP0579226A2 Force transducer and pressure detecting circuit using the same
失效
Kraftwandler und seiner Verwendung在einer Druckerfassungsschaltung。
- 专利标题： Force transducer and pressure detecting circuit using the same
- 专利标题（中）： Kraftwandler und seiner Verwendung在einer Druckerfassungsschaltung。
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申请号： EP93111374.0申请日： 1993-07-15
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公开(公告)号： EP0579226A2公开(公告)日： 1994-01-19
- 发明人: Omura, Yoshiteru , Tsukada, Kouji , Nonomura, Yutaka, City-coop Shimadahigashi C-407 , Morikawa, Takeshi, Nagakute-ryo 602
- 申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- 申请人地址： 41-1, Aza Yokomichi Oaza Nagakute Nagakute-cho Aichi-gun Aichi-ken, 480-11 JP
- 专利权人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- 当前专利权人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- 当前专利权人地址： 41-1, Aza Yokomichi Oaza Nagakute Nagakute-cho Aichi-gun Aichi-ken, 480-11 JP
- 代理机构： Blumbach, Kramer & Partner
- 优先权： JP212082/92 19920716
- 主分类号： G01L1/18
- IPC分类号： G01L1/18 ; G01L9/06 ; G01L9/00
摘要：
A force transducer (1000) comprising:
(a) a silicon semiconductor (40) having a face (40a) of (110) or a crystal face equivalent to the face (40a) of (110), on which a force (W) is to be applied;
(b) a pair of input-output shared electrodes (42, 42') mounted on the crystal face (40a) of said silicon semiconductor (40) in mutual confronting relationship in a direction of 〈110〉 of the crystal or a direction equivalent to the direction of 〈110〉;
(c) a force transmission block (60) connected to the crystal face (40a) of said silicon semiconductor (40) for transmitting the force (W) perpendicularly to the crystal face (40a); and
(d) a support bed (70) supporting said silicon semiconductor (40) and connected to said silicon semiconductor (40) at a face opposite to the crystal face to which said force transmission block (60) is connected, whereby a voltage corresponding to the force (W) and to be measured is output from said input-output shared electrodes (42, 42') when the force (W) is applied perpendicularly to the crystal face (40a) of said silicon semiconductor (40) via said force transmission block (60) while a current flows in said silicon semiconductor via said input-output shared electrodes (42, 42').
(a) a silicon semiconductor (40) having a face (40a) of (110) or a crystal face equivalent to the face (40a) of (110), on which a force (W) is to be applied;
(b) a pair of input-output shared electrodes (42, 42') mounted on the crystal face (40a) of said silicon semiconductor (40) in mutual confronting relationship in a direction of 〈110〉 of the crystal or a direction equivalent to the direction of 〈110〉;
(c) a force transmission block (60) connected to the crystal face (40a) of said silicon semiconductor (40) for transmitting the force (W) perpendicularly to the crystal face (40a); and
(d) a support bed (70) supporting said silicon semiconductor (40) and connected to said silicon semiconductor (40) at a face opposite to the crystal face to which said force transmission block (60) is connected, whereby a voltage corresponding to the force (W) and to be measured is output from said input-output shared electrodes (42, 42') when the force (W) is applied perpendicularly to the crystal face (40a) of said silicon semiconductor (40) via said force transmission block (60) while a current flows in said silicon semiconductor via said input-output shared electrodes (42, 42').
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