公开(公告)号：EP0548907A3

公开(公告)日：1994-02-16

申请号：EP92121789.9

申请日：1992-12-22

申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

发明人： Morikawa, Takeshi, Nagakute-ryo 602 ,  Tsukada, Kouji ,  Nonomura, Yutaka, City-coop Shimadahigashi C-407 ,  Omura, Yoshiteru

IPC分类号： G01L1/18

CPC分类号： G01L1/18

摘要： A force transducer comprises: an N-type silicon single crystal having a crystal face of (110) on which a force is applied; a pair of first electrodes and a pair of second electrodes mounted on the crystal face of (110) of the N-type silicon single crystal, the first electrodes facing in a direction angularly spaced by 135 degrees from a direction of (001) of the crystal, and the second electrodes being angularly spaced by 90 degrees from the first electrodes, one of the pairs of first and second electrodes being adapted to serve as input electrodes and the other being adapted to serve as output electrodes; a force transmission block connected to the crystal face of (110) of the N-type silicon single crystal for transmitting the force perpendicularly to the crystal face; and a support bed supporting the N-type silicon single crystal and connected to the N-type silicon single crystal at a face opposite to the crystal face to which the force transmission block is connected, the support bed being in the form of a planar structure having a horizontal cross-sectional shape with a short axis and a long axis.

摘要翻译： 一种力传感器包括：具有施加力的（110）晶面的N型硅单晶; 一对第一电极和一对第二电极，安装在N型硅单晶的（110）的晶面上，第一电极面向与第一电极的（001）方向成角度间隔135度的方向 晶体，并且第二电极与第一电极成角度间隔90度，第一和第二电极对中的一个适于用作输入电极，而另一个适于用作输出电极; 与N型硅单晶（110）的晶面连接的力传递块，用于垂直于晶面传递力; 以及支撑所述N型硅单晶的支撑底座，所述支撑底座在与所述力传输块连接的晶面相反的面上与所述N型硅单晶连接，所述支撑底座为平面结构 具有短轴和长轴的水平横截面形状。

公开(公告)号：EP0548907B1

公开(公告)日：1996-04-10

申请号：EP92121789.9

申请日：1992-12-22

申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

发明人： Morikawa, Takeshi, Nagakute-ryo 602 ,  Tsukada, Kouji ,  Nonomura, Yutaka, City-coop Shimadahigashi C-407 ,  Omura, Yoshiteru

IPC分类号： G01L1/18

CPC分类号： G01L1/18

公开(公告)号：EP0579226B1

公开(公告)日：1997-03-12

申请号：EP93111374.0

申请日：1993-07-15

申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

发明人： Omura, Yoshiteru ,  Tsukada, Kouji ,  Nonomura, Yutaka, City-coop Shimadahigashi C-407 ,  Morikawa, Takeshi, Nagakute-ryo 602

IPC分类号： G01L1/18 ,  G01L9/06 ,  G01L9/00

CPC分类号： G01L9/0052 ,  G01L1/18 ,  G01L9/0058 ,  G01L9/065 ,  Y10S73/04

公开(公告)号：EP0548907A2

公开(公告)日：1993-06-30

申请号：EP92121789.9

申请日：1992-12-22

申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

发明人： Morikawa, Takeshi, Nagakute-ryo 602 ,  Tsukada, Kouji ,  Nonomura, Yutaka, City-coop Shimadahigashi C-407 ,  Omura, Yoshiteru

IPC分类号： G01L1/18

CPC分类号： G01L1/18

摘要： A force transducer comprises: an N-type silicon single crystal having a crystal face of (110) on which a force is applied; a pair of first electrodes and a pair of second electrodes mounted on the crystal face of (110) of the N-type silicon single crystal, the first electrodes facing in a direction angularly spaced by 135 degrees from a direction of (001) of the crystal, and the second electrodes being angularly spaced by 90 degrees from the first electrodes, one of the pairs of first and second electrodes being adapted to serve as input electrodes and the other being adapted to serve as output electrodes; a force transmission block connected to the crystal face of (110) of the N-type silicon single crystal for transmitting the force perpendicularly to the crystal face; and a support bed supporting the N-type silicon single crystal and connected to the N-type silicon single crystal at a face opposite to the crystal face to which the force transmission block is connected, the support bed being in the form of a planar structure having a horizontal cross-sectional shape with a short axis and a long axis.

摘要翻译： 力传感器包括：具有施加力的晶体面（110）的N型硅单晶; 一对第一电极和一对第二电极，安装在N型硅单晶的（110）的晶面上，第一电极面向与晶体的Lang＆001＆Rang＆的方向成角度地间隔135度的方向， 并且所述第二电极与所述第一电极成角度地间隔90度，所述一对第一和第二电极中的一个适于用作输入电极，另一个适于用作输出电极; 连接到所述N型硅单晶的（110）的晶面的力传递块，用于垂直于所述晶面传递所述力; 以及支撑N型硅单晶并且在与所述力传递块连接的晶面相对的面上与所述N型硅单晶相连的支撑床，所述支撑床为平面结构 具有短轴和长轴的水平横截面形状。

公开(公告)号：EP0579226A3

公开(公告)日：1994-02-16

申请号：EP93111374.0

申请日：1993-07-15

申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

发明人： Omura, Yoshiteru ,  Tsukada, Kouji ,  Nonomura, Yutaka, City-coop Shimadahigashi C-407 ,  Morikawa, Takeshi, Nagakute-ryo 602

IPC分类号： G01L1/18 ,  G01L9/06 ,  G01L9/00

CPC分类号： G01L9/0052 ,  G01L1/18 ,  G01L9/0058 ,  G01L9/065 ,  Y10S73/04

摘要： A force transducer (1000) comprising:
(a) a silicon semiconductor (40) having a face (40a) of (110) or a crystal face equivalent to the face (40a) of (110), on which a force (W) is to be applied; (b) a pair of input-output shared electrodes (42, 42') mounted on the crystal face (40a) of said silicon semiconductor (40) in mutual confronting relationship in a direction of 〈110〉 of the crystal or a direction equivalent to the direction of 〈110〉; (c) a force transmission block (60) connected to the crystal face (40a) of said silicon semiconductor (40) for transmitting the force (W) perpendicularly to the crystal face (40a); and (d) a support bed (70) supporting said silicon semiconductor (40) and connected to said silicon semiconductor (40) at a face opposite to the crystal face to which said force transmission block (60) is connected, whereby a voltage corresponding to the force (W) and to be measured is output from said input-output shared electrodes (42, 42') when the force (W) is applied perpendicularly to the crystal face (40a) of said silicon semiconductor (40) via said force transmission block (60) while a current flows in said silicon semiconductor via said input-output shared electrodes (42, 42').

摘要翻译： 一种力传感器（1000），包括：（a）具有（110）的面（40a）或等同于（110）的面（40a）的晶面的硅半导体（40），其上的力（W） 将被应用; （b）在晶体的<110>方向上以相互面对的关系安装在所述硅半导体（40）的晶面（40a）上的一对输入输出共用电极（42,42'）或等效的方向 到<110>的方向; （c）与所述硅半导体（40）的晶面（40a）连接，用于垂直于晶面（40a）传输力（W）的力传输块（60）; （d）支撑所述硅半导体（40）并在与所述力传输块（60）连接的晶面相对的面上与所述硅半导体（40）连接的支撑台（70） （W）垂直于所述硅半导体（40）的晶面（40a）施加所述力（W）时，从所述输入输出共用电极（42,42'）输出与所述力（W） （60），同时电流经由所述输入输出共享电极（42,42'）流入所述硅半导体中。

公开(公告)号：EP0579226A2

公开(公告)日：1994-01-19

申请号：EP93111374.0

申请日：1993-07-15

申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

发明人： Omura, Yoshiteru ,  Tsukada, Kouji ,  Nonomura, Yutaka, City-coop Shimadahigashi C-407 ,  Morikawa, Takeshi, Nagakute-ryo 602

IPC分类号： G01L1/18 ,  G01L9/06 ,  G01L9/00

CPC分类号： G01L9/0052 ,  G01L1/18 ,  G01L9/0058 ,  G01L9/065 ,  Y10S73/04

摘要： A force transducer (1000) comprising:

(a) a silicon semiconductor (40) having a face (40a) of (110) or a crystal face equivalent to the face (40a) of (110), on which a force (W) is to be applied;
(b) a pair of input-output shared electrodes (42, 42') mounted on the crystal face (40a) of said silicon semiconductor (40) in mutual confronting relationship in a direction of 〈110〉 of the crystal or a direction equivalent to the direction of 〈110〉;
(c) a force transmission block (60) connected to the crystal face (40a) of said silicon semiconductor (40) for transmitting the force (W) perpendicularly to the crystal face (40a); and
(d) a support bed (70) supporting said silicon semiconductor (40) and connected to said silicon semiconductor (40) at a face opposite to the crystal face to which said force transmission block (60) is connected, whereby a voltage corresponding to the force (W) and to be measured is output from said input-output shared electrodes (42, 42') when the force (W) is applied perpendicularly to the crystal face (40a) of said silicon semiconductor (40) via said force transmission block (60) while a current flows in said silicon semiconductor via said input-output shared electrodes (42, 42').

摘要翻译： 一种力传感器（1000），包括：（a）具有（110）的面（40a）或与（110）的面（40a）相当的晶面的硅半导体（40），其上具有力（W） 应用; （b）在所述硅半导体（40）的晶面（40a）上以与所述晶体的<110>方向或相反方向相对的方式相互面对的关系的一对输入输出共享电极（42,42'） 朝<110>方向; （c）连接到所述硅半导体（40）的晶面（40a）的力传递块（60），用于传递垂直于所述晶体面（40a）的力（W）; 和（d）支撑所述硅半导体（40）并且在与所述力传递块（60）连接的晶面相对的表面处连接到所述硅半导体（40）的支撑床（70），由此对应于 当所述力（W）垂直于所述硅半导体（40）的所述晶面（40a）施加时，从所述输入 - 输出共享电极（42,42'）输出所述测量的力（W） 电流通过所述输入输出共享电极（42,42'）流过所述硅半导体。