发明公开
EP0587212A2 ESD protection for inputs requiring operation beyond supply voltages
失效
对于需要上面的电源电压进行操作输入的ESD保护。
- 专利标题： ESD protection for inputs requiring operation beyond supply voltages
- 专利标题（中）： 对于需要上面的电源电压进行操作输入的ESD保护。
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申请号： EP93202353.4申请日： 1993-08-10
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公开(公告)号： EP0587212A2公开(公告)日： 1994-03-16
- 发明人: Hoang, Tuong Hai , Izadinia, Mansour
- 申请人： NATIONAL SEMICONDUCTOR CORPORATION
- 申请人地址： 2900 Semiconductor Drive, P.O. Box 58090 Santa Clara, California 95052-8090 US
- 专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址： 2900 Semiconductor Drive, P.O. Box 58090 Santa Clara, California 95052-8090 US
- 代理机构： Horton, Andrew Robert Grant
- 优先权： US943913 19920911
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H02H9/04
摘要：
A circuit utilizable for protecting an integrated circuit feature from electrostatic discharge is disclosed. A first bipolar transistor (Q10) has its emitter connected to the IC feature and its collector connected to ground. A second bipolar transistor (Q20) has its emitter connected to the IC feature and its collector connected to its base and to the base of the first bipolar transistor. A field effect transistor (M10) has its gate and drain connected to the IC feature and its body connected to its source and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor. A diode (D10) has its cathode connected to the body and the source of the field effect transistor and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor.
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