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1.发明公开
公开(公告)号：EP0587212A2
公开(公告)日：1994-03-16
申请号：EP93202353.4
申请日：1993-08-10
CPC分类号： H01L27/0251 , H01L2924/0002 , H01L2924/00
摘要： A circuit utilizable for protecting an integrated circuit feature from electrostatic discharge is disclosed. A first bipolar transistor (Q10) has its emitter connected to the IC feature and its collector connected to ground. A second bipolar transistor (Q20) has its emitter connected to the IC feature and its collector connected to its base and to the base of the first bipolar transistor. A field effect transistor (M10) has its gate and drain connected to the IC feature and its body connected to its source and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor. A diode (D10) has its cathode connected to the body and the source of the field effect transistor and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor.
摘要翻译： 可利用用于保护集成电路特征免受静电放电的电路是游离缺失盘。 第一双极晶体管（Q10）的发射极连接到接地的IC功能和它的集电极。 第二双极晶体管（Q20）的发射极连接到与它的基和所述第一双极晶体管的基极的集成电路特征和它的集电极。 一种场效应晶体管（M10）的栅极和漏极连接到连接到它的源极和到所述第二双极型晶体管的集电极和基极和到所述第一双极晶体管的基极的集成电路特征和它的身体。 二极管（D10）的阴极连接到所述主体和所述场效应晶体管的源极和到所述第二双极型晶体管的集电极和基极和到所述第一双极晶体管的基极。
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2.发明公开
公开(公告)号：EP0587212A3
公开(公告)日：1995-03-22
申请号：EP93202353.4
申请日：1993-08-10
CPC分类号： H01L27/0251 , H01L2924/0002 , H01L2924/00
摘要： A circuit utilizable for protecting an integrated circuit feature from electrostatic discharge is disclosed. A first bipolar transistor (Q10) has its emitter connected to the IC feature and its collector connected to ground. A second bipolar transistor (Q20) has its emitter connected to the IC feature and its collector connected to its base and to the base of the first bipolar transistor. A field effect transistor (M10) has its gate and drain connected to the IC feature and its body connected to its source and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor. A diode (D10) has its cathode connected to the body and the source of the field effect transistor and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor.
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