发明公开
- 专利标题： Transistors and methods for fabrication thereof
- 专利标题（中）： 晶体管及其制造方法
-
申请号： EP93307431.2申请日： 1993-09-20
-
公开(公告)号： EP0596601A3公开(公告)日： 1994-09-07
- 发明人: Iranmanesh, Ali A. , Bien, David Edward , Grubisich, Michael John
- 申请人： NATIONAL SEMICONDUCTOR CORPORATION
- 申请人地址： 2900 Semiconductor Drive, P.O. Box 58090 Santa Clara, California 95052-8090 US
- 专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址： 2900 Semiconductor Drive, P.O. Box 58090 Santa Clara, California 95052-8090 US
- 代理机构： Bowles, Sharon Margaret
- 优先权： US951524 19920925
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/331
摘要：
A bipolar transistor is provided in which the base-emitter junctions do not traverse the base but terminate inside the top surface of the base. The transistor has long emitter perimeter available for current flow and more than two emitter sides ( e.g. , three sides) available for current flow, which allows obtaining a low base resistance, a low emitter resistance, a low collector resistance, a low base-collector capacitance, and a small size.
公开/授权文献
信息查询
IPC分类:
