发明公开
- 专利标题: Mixed typology output stage
- 专利标题(中): Ausgangstufe mit Transistoren von unterschiedlichem Typ。
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申请号: EP93830492.0申请日: 1993-12-07
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公开(公告)号: EP0657995A1公开(公告)日: 1995-06-14
- 发明人: Cini, Carlo , Stefani, Fabrizio
- 申请人: SGS-THOMSON MICROELECTRONICS S.r.l.
- 申请人地址: Via C. Olivetti, 2 I-20041 Agrate Brianza (Milano) IT
- 专利权人: SGS-THOMSON MICROELECTRONICS S.r.l.
- 当前专利权人: SGS-THOMSON MICROELECTRONICS S.r.l.
- 当前专利权人地址: Via C. Olivetti, 2 I-20041 Agrate Brianza (Milano) IT
- 代理机构: Pellegri, Alberto
- 主分类号: H03F3/30
- IPC分类号: H03F3/30
摘要:
An output power stage composed of a pair of transistors driven in phase opposition and wherein the pull-up transistor is a PNP bipolar transistor and the push-down transistor is an n-channel FET has an outstandingly improved power handling capability per semiconductor area occupied, coupled with a large output voltage swing, without requiring the use of externally connected discrete boot-strap components. The "hybrid" output stage is fully complementary and the current-driven, bipolar, pull-up transistor may be driven through an auxiliary stage composed of a field effect transistor for substantially eliminating output power requisites of a signal amplification stage.
公开/授权文献
- EP0657995B1 Mixed typology output stage 公开/授权日:1999-10-13
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