发明公开
EP0698287A1 A METHOD FOR FORMING A VIRTUAL-GROUND FLASH EPROM ARRAY WITH FLOATING GATES THAT ARE SELF ALIGNED TO THE FIELD OXIDE REGIONS OF THE ARRAY
失效
方法用于制造具有虚地的FLASH EPROM MATRIX具有浮动栅极WHAT自对准于矩阵的场氧化物区是
- 专利标题： A METHOD FOR FORMING A VIRTUAL-GROUND FLASH EPROM ARRAY WITH FLOATING GATES THAT ARE SELF ALIGNED TO THE FIELD OXIDE REGIONS OF THE ARRAY
- 专利标题（中）： 方法用于制造具有虚地的FLASH EPROM MATRIX具有浮动栅极WHAT自对准于矩阵的场氧化物区是
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申请号： EP95914117.0申请日： 1995-03-14
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公开(公告)号： EP0698287A1公开(公告)日： 1996-02-28
- 发明人: BERGEMONT, Albert
- 申请人： NATIONAL SEMICONDUCTOR CORPORATION
- 申请人地址： 1090 Kifer Road, M/S 16-135 Sunnyvale, CA 95086-3737 US
- 专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址： 1090 Kifer Road, M/S 16-135 Sunnyvale, CA 95086-3737 US
- 代理机构： Bowles, Sharon Margaret, et al
- 优先权： US19940213903 19940315
- 国际公布： WO1995025345 19950921
- 主分类号： H01L21
- IPC分类号： H01L21
摘要：
The floating gate of a virtual-ground flash electrically programmable read-only-memory (EPROM) cell, which is formed over a portion of a pair of vertically-adjacent field oxide regions, is self aligned to the field oxide regions by utilizing a stacked etch process to define the widths of both the floating gate and the field oxide regions. As a result, the pitch of the cells in the X direction can be substantially reduced.
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