发明公开
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： HALBLEITERANORDNUNG
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申请号： EP94903034申请日： 1993-12-21
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公开(公告)号： EP0709897A4公开(公告)日： 1997-05-28
- 发明人: OHMI TADAHIRO , SHIMADA HISAYUKI , HIRAYAMA MASAKI
- 申请人： OHMI TADAHIRO
- 专利权人： OHMI TADAHIRO
- 当前专利权人： OHMI TADAHIRO
- 优先权： JP34303092 1992-12-24; JP18199893 1993-06-28
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28 ; H01L21/316 ; H01L21/336 ; H01L23/14 ; H01L27/06 ; H01L27/092 ; H01L27/12 ; H01L29/49 ; H01L29/51 ; H01L29/786 ; H01L29/772 ; H01L21/20
摘要：
This semiconductor device has a large capacity of power driving, and can operate at a high speed. A first semiconductor region of a first conductivity type is formed on a metal substrate through a first insulating film. In the first semiconductor region, first source and drain regions of a second conductivity type are formed. Further, on the region which isolates the first source and drain regions, a first metallic gate electrode is formed through a second insulating film.
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IPC分类:
