公开(公告)号：EP1439571B1

公开(公告)日：2016-09-14

申请号：EP02775374.8

申请日：2002-10-18

申请人： Goto, Naohisa ,  Ohmi, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： GOTO, Naohisa ,  OHMI, Tadahiro ,  HIRAYAMA, Masaki ,  GOTO, Tetsuya

IPC分类号： H01J37/32

CPC分类号： H01J37/32229 ,  H01J37/32192

公开(公告)号：EP1130634B1

公开(公告)日：2012-02-01

申请号：EP00949896.5

申请日：2000-07-26

申请人： Ohmi, Tadahiro

发明人： Ohmi, Tadahiro

IPC分类号： H01L21/316 ,  H01L21/76 ,  H01L29/78

CPC分类号： H01L27/1214 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/28238 ,  H01L29/4908 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicon oxide film (1701) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film (1701) and the stress at the interface between silicon and the silicon oxide film are relaxed, and the silicon oxide film has a high quality even though it was formed at a low temperature. The uniformity of thickness of the silicon oxide film (1701) on the silicon of the side wall of a groove (recess) in the element isolating region is 30% or less. Consequently, the silicon oxide film (1701) has its characteristics and reliability superior to those of a silicon thermal oxide film, and the element isolating region can be made small, thereby realizing a high-performance transistor integrated circuit preferably adaptable to an SOI transistor and a TFT.

公开(公告)号：EP2166565A3

公开(公告)日：2010-07-07

申请号：EP09075556.2

申请日：2004-05-24

申请人： Ohmi, Tadahiro ,  Yazaki Corporation

发明人： Ohmi, Tadahiro ,  Teramoto, Akinobu ,  Akahori, Hiroshi ,  Nii, Keiichi ,  Watanabe, Takanori

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/316 ,  H01L21/304

CPC分类号： H01L29/7813 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66734

摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.

摘要翻译： 在形成在基本上为（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。

公开(公告)号：EP2166565A2

公开(公告)日：2010-03-24

申请号：EP09075556.2

申请日：2004-05-24

申请人： Ohmi, Tadahiro ,  Yazaki Corporation

发明人： Ohmi, Tadahiro ,  Teramoto, Akinobu ,  Akahori, Hiroshi ,  Nii, Keiichi ,  Watanabe, Takanori

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/316 ,  H01L21/304

CPC分类号： H01L29/7813 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66734

摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.

摘要翻译： 在形成于实质上具有（110）面的硅面上的P沟道功率MIS型场效应晶体管中，使用提供10V以上的栅极/源极间耐压的栅极绝缘膜，并使硅表面 ，或者包含Kr，Ar或Xe。

公开(公告)号：EP1265279B1

公开(公告)日：2009-10-14

申请号：EP01912317.3

申请日：2001-03-13

申请人： Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  SUGAWA, Shigetoshi, Dept of Electronic Engineering

IPC分类号： H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  H01L27/115 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/31641 ,  C23C8/02 ,  C23C8/36 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31662 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

公开(公告)号：EP1609990B1

公开(公告)日：2009-08-12

申请号：EP04716009.8

申请日：2004-03-01

申请人： Ohmi, Tadahiro

发明人： Ohmi, Tadahiro

IPC分类号： F04B37/16 ,  F04F5/20 ,  F04D19/04 ,  F04C25/02 ,  F04F5/04 ,  F04D25/16

CPC分类号： F04B37/14 ,  F04C18/16 ,  F04C23/005 ,  F04C2220/12 ,  F04D19/046 ,  F04F5/20 ,  F04F5/54

公开(公告)号：EP1429380A4

公开(公告)日：2009-07-15

申请号：EP02760759

申请日：2002-08-28

申请人： ZEON CORP ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  JIMBO T ,  MURAKAMI T

IPC分类号： H01L21/00 ,  H01L21/673

CPC分类号： H01L21/67303 ,  H01L21/67306 ,  H01L21/67313 ,  H01L21/67316 ,  H01L21/6732 ,  H01L21/67323 ,  H01L21/67326 ,  H01L21/6733 ,  H01L21/67353 ,  H01L21/67359 ,  H01L21/67386 ,  Y10T428/13 ,  Y10T428/1303 ,  Y10T428/1352 ,  Y10T428/1359 ,  Y10T428/1386 ,  Y10T428/139

摘要： A container for a precision substrate, which has at least one component formed from a thermoplastic resin, characterized in that it satisfies the following characteristics [1] and [2]: [1] when a flow of an ultra-high pure argon gas impurity content: 1 ppb or less is continuously contacted with the container with a flow rate of 1.2 L/min, the argon gas has a moisture content of 30 ppb per 1 cm2 of the surface area of the component 30 min after the start of contacting [2] when the container is placed in air at 100ringC, the amount of the organic materials in the air which is increased in the period of 300 min. is 150 ng or less per 1 g of the weight of the component. The container can satisfy the requirement of low staining for a container for a precision substrate.

公开(公告)号：EP1666645A4

公开(公告)日：2009-01-07

申请号：EP04747456

申请日：2004-07-07

申请人： ADMAP INC ,  MITSUI SHIPBUILDING ENG ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  SANO SUMIO

IPC分类号： C30B29/36 ,  H01L21/04 ,  H01L21/304 ,  H01L21/306 ,  H01L21/314 ,  H01L21/336 ,  H01L29/16 ,  H01L29/78

CPC分类号： H01L21/02052 ,  C30B29/36 ,  H01L21/3148 ,  H01L29/1608 ,  Y10T428/31

摘要： A silicon carbide product is disclosed which is characterized by having a surface with a metal impurity concentration of not more than 1×10 11 (atoms/cm 2 ). Also disclosed are a method for producing such a silicon carbide product and a method for cleaning a silicon carbide product. A silicon carbide having such a highly cleaned surface can be obtained by cleaning it with a hydrofluoric acid, a hydrochloric acid, or an aqueous solution containing a sulfuric acid and a hydrogen peroxide solution. The present invention provides a highly cleaned silicon carbide, and thus enables to produce a semiconductor device which is free from consideration on deterioration in characteristics caused by impurities. Further, when the silicon carbide is used in a unit for semiconductor production or the like, there is such an advantage that an object processed in the unit can be prevented from suffering an adverse affect of flying impurities.

摘要翻译： 公开了一种碳化硅产品，其特征在于具有不大于1×10 11（原子/ cm 2）的金属杂质浓度的表面。 还公开了制造这种碳化硅产品的方法和清洁碳化硅产品的方法。 通过用氢氟酸，盐酸或含有硫酸和过氧化氢溶液的水溶液进行清洗，可以得到具有高度清洁表面的碳化硅。 本发明提供了一种高度清洁的碳化硅，因此能够制造出不考虑由杂质引起的特性劣化的半导体器件。 此外，当碳化硅用于半导体生产等的单元中时，具有能够防止在该单元中加工的物体遭受飞散杂质的不利影响的优点。

公开(公告)号：EP1486714B1

公开(公告)日：2008-08-27

申请号：EP02705285.1

申请日：2002-03-18

申请人： Fujikin Incorporated ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  YAMAJI, Michio Fujikin Incorporated ,  NOJIMA, Shinya Fujikin Incorporated ,  KATSUMI, Yukito Fujikin Incorporated ,  SHINOHARA, Tsutomu Fujikin Incorporated

IPC分类号： F16L19/00 ,  F16J15/10

CPC分类号： F16J15/02 ,  F16J15/062 ,  F16J15/104 ,  F16L19/00 ,  F16L19/0212 ,  F16L19/0218 ,  F16L25/0018 ,  F16L27/082 ,  F16L27/0828 ,  Y10S277/925 ,  Y10S285/917

摘要： At the abutting end faces of coupling members (1, 2), annular recesses (3, 4) having annular protrusions (5, 6) on the bottom face are provided while surrounding fluid channels (1a, 2a). A gasket (10) comprises a seal part (11) interposed between the protrusions (5, 6) of the coupling members (1, 2) while having an outside diameter smaller than the diameter of the annular recesses (3, 4), and a guide part (12) disposed on the outside of the seal part (11) while having an outside diameter being fitted in the annular recesses (3, 4). When the coupling members (1, 2) are fastened properly, the end faces thereof abut each other. An annular groove (14) is made in the outer circumference of the seal part (11) and a snap ring (13) fitted in the annular groove (14) couples the seal part (11) and the guide part (12).

公开(公告)号：EP1912253A2

公开(公告)日：2008-04-16

申请号：EP08001543.1

申请日：2001-03-13

申请人： Ohmi, Tadahiro

发明人： Ohmi, Tadahiro ,  Sugawa, Shigetoshi

IPC分类号： H01L21/316 ,  H01L21/318 ,  H01L21/3105

CPC分类号： H01L21/31641 ,  C23C8/02 ,  C23C8/36 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31662 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

摘要翻译： 形成绝缘膜的方法包括以下步骤：在基板上形成绝缘膜，并且通过将绝缘膜暴露于由等离子体形成的原子态氧O *或原子状态的氮化氢自由基NH *来改变绝缘膜的膜质量 使用Kr或Ar作为惰性气体。