发明公开
- 专利标题： Trench capacitor DRAM cell
- 专利标题（中）： Herstellungsverfahrenfüreine Grabenkondensator-DRAM-Zelle
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申请号： EP95116061.3申请日： 1995-10-11
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公开(公告)号： EP0713253A1公开(公告)日： 1996-05-22
- 发明人: Alsmeier, Johann , Gall, Martin
- 申请人： SIEMENS AKTIENGESELLSCHAFT
- 申请人地址： Wittelsbacherplatz 2 D-80333 München DE
- 专利权人： SIEMENS AKTIENGESELLSCHAFT
- 当前专利权人： SIEMENS AKTIENGESELLSCHAFT
- 当前专利权人地址： Wittelsbacherplatz 2 D-80333 München DE
- 优先权： US340500 19941115
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/8242
摘要：
A DRAM unit cell is disclosed which comprises a trench capacitor (23,25,24) having a signal electrode (24), a bit line (28), a planar active word line (36) overlapping the trench capacitor and a planar FET having a main conducting path coupled between the signal electrode of the trench capacitor and the bit line and a gate electrode formed by the active word line.
The unit cell takes up a smaller substrate area than prior art unit cells because of the overlap between the word line and the trench capacitor.
The unit cell takes up a smaller substrate area than prior art unit cells because of the overlap between the word line and the trench capacitor.
公开/授权文献
- EP0713253B1 Manufacturing method for a trench capacitor DRAM cell 公开/授权日：2006-12-13
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