发明公开
EP0725432A3 Refractory gate heterostructure field effect transistor and method
失效
具有耐火栅极和方法异质结场效应晶体管
- 专利标题： Refractory gate heterostructure field effect transistor and method
- 专利标题（中）： 具有耐火栅极和方法异质结场效应晶体管
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申请号： EP96101189.7申请日： 1996-01-29
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公开(公告)号： EP0725432A3公开(公告)日： 1997-06-04
- 发明人: O'Neil, Vernon Patrick II , Abrokwah, Jonathan K. , Hashemi, Majid M. , Huang, Jenn-Hwa , Nair, Vijay K. , Nikpourian, Farideh , Tehrani, Saied Nikoo
- 申请人： MOTOROLA, INC.
- 申请人地址： 1303 East Algonquin Road Schaumburg, IL 60196 US
- 专利权人： MOTOROLA, INC.
- 当前专利权人： MOTOROLA, INC.
- 当前专利权人地址： 1303 East Algonquin Road Schaumburg, IL 60196 US
- 代理机构： Hudson, Peter David
- 优先权： US384050 19950206
- 主分类号： H01L21/335
- IPC分类号： H01L21/335 ; H01L21/8252 ; H01L21/285 ; H01L29/778 ; H01L27/06 ; H01L29/45
摘要：
A heterostructure field effect transistor and method including at least one passivation layer (20) and at least one etch stop layer (22). Enhancement, depletion and combined devices with both enhancement mode and depletion mode devices are possible with minor process variations. Refractory gate (40) and non-gold refractory ohmic contact (52) metallization combined with other features allows non-liftoff metal patterning.
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