公开(公告)号：EP0725432A3

公开(公告)日：1997-06-04

申请号：EP96101189.7

申请日：1996-01-29

申请人： MOTOROLA, INC.

发明人： O'Neil, Vernon Patrick II ,  Abrokwah, Jonathan K. ,  Hashemi, Majid M. ,  Huang, Jenn-Hwa ,  Nair, Vijay K. ,  Nikpourian, Farideh ,  Tehrani, Saied Nikoo

IPC分类号： H01L21/335 ,  H01L21/8252 ,  H01L21/285 ,  H01L29/778 ,  H01L27/06 ,  H01L29/45

CPC分类号： H01L29/66462 ,  H01L21/28575 ,  H01L21/28581 ,  H01L21/8252 ,  H01L29/452 ,  H01L29/475 ,  H01L29/7783

摘要： A heterostructure field effect transistor and method including at least one passivation layer (20) and at least one etch stop layer (22). Enhancement, depletion and combined devices with both enhancement mode and depletion mode devices are possible with minor process variations. Refractory gate (40) and non-gold refractory ohmic contact (52) metallization combined with other features allows non-liftoff metal patterning.

公开(公告)号：EP0725432A2

公开(公告)日：1996-08-07

申请号：EP96101189.7

申请日：1996-01-29

申请人： MOTOROLA, INC.

发明人： O'Neil, Vernon Patrick II ,  Abrokwah, Jonathan K. ,  Hashemi, Majid M. ,  Huang, Jenn-Hwa ,  Nair, Vijay K. ,  Nikpourian, Farideh ,  Tehrani, Saied Nikoo

IPC分类号： H01L21/335 ,  H01L21/8252 ,  H01L21/285 ,  H01L29/778 ,  H01L27/06 ,  H01L29/45

CPC分类号： H01L29/66462 ,  H01L21/28575 ,  H01L21/28581 ,  H01L21/8252 ,  H01L29/452 ,  H01L29/475 ,  H01L29/7783

摘要： A heterostructure field effect transistor and method including at least one passivation layer (20) and at least one etch stop layer (22). Enhancement, depletion and combined devices with both enhancement mode and depletion mode devices are possible with minor process variations. Refractory gate (40) and non-gold refractory ohmic contact (52) metallization combined with other features allows non-liftoff metal patterning.

摘要翻译： 一种异质结构场效应晶体管和方法，包括至少一个钝化层（20）和至少一个蚀刻停止层（22）。 增强，耗尽和增强模式和耗尽模式设备的组合设备都可能具有较小的过程变化。 耐火门（40）和非金难熔欧姆接触（52）金属化结合其他特征允许非剥离金属图案化。