发明公开
- 专利标题: Saturable Bragg reflector
- 专利标题(中): 可饱和布拉格反射器
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申请号: EP96301480.8申请日: 1996-03-05
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公开(公告)号: EP0732613A3公开(公告)日: 1997-08-20
- 发明人: Knox, Wayne Harvey
- 申请人: AT&T IPM Corp.
- 申请人地址: 2333 Ponce de Leon Boulevard Coral Gables, Florida 33134 US
- 专利权人: AT&T IPM Corp.
- 当前专利权人: AT&T IPM Corp.
- 当前专利权人地址: 2333 Ponce de Leon Boulevard Coral Gables, Florida 33134 US
- 代理机构: Watts, Christopher Malcolm Kelway, Dr.
- 优先权: US404664 19950315
- 主分类号: G02F1/35
- IPC分类号: G02F1/35 ; H01S3/098 ; H01S3/133
摘要:
Low optical loss and simplified fabrication are achieved by a nonlinear reflector which incorporates one or more semiconductor quantum wells within a standard semiconductor quarter wave stack reflector. The nonlinear reflector provides an intensity dependent response which permits it to be used for saturable absorption directly in a main oscillating cavity of a laser. Saturation intensity of the nonlinear reflector and thereby related laser modelocking properties can be controlled by disposing the quantum well at a particular position in the reflector structure.
公开/授权文献
- EP0732613B1 Laser with a saturable Bragg reflector 公开/授权日:2001-01-03
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