公开(公告)号：EP0732613A3

公开(公告)日：1997-08-20

申请号：EP96301480.8

申请日：1996-03-05

申请人： AT&T IPM Corp.

发明人： Knox, Wayne Harvey

IPC分类号： G02F1/35 ,  H01S3/098 ,  H01S3/133

CPC分类号： H01S3/1118 ,  B82Y20/00 ,  G02F1/3523 ,  G02F1/3556

摘要： Low optical loss and simplified fabrication are achieved by a nonlinear reflector which incorporates one or more semiconductor quantum wells within a standard semiconductor quarter wave stack reflector. The nonlinear reflector provides an intensity dependent response which permits it to be used for saturable absorption directly in a main oscillating cavity of a laser. Saturation intensity of the nonlinear reflector and thereby related laser modelocking properties can be controlled by disposing the quantum well at a particular position in the reflector structure.

公开(公告)号：EP0732613B1

公开(公告)日：2001-01-03

申请号：EP96301480.8

申请日：1996-03-05

申请人： AT&T IPM Corp.

发明人： Knox, Wayne Harvey

IPC分类号： H01S3/098 ,  G02F1/35 ,  H01S5/068

CPC分类号： H01S3/1118 ,  B82Y20/00 ,  G02F1/3523 ,  G02F1/3556

公开(公告)号：EP0732613A2

公开(公告)日：1996-09-18

申请号：EP96301480.8

申请日：1996-03-05

申请人： AT&T IPM Corp.

发明人： Knox, Wayne Harvey

IPC分类号： G02F1/35 ,  H01S3/098 ,  H01S3/133

CPC分类号： H01S3/1118 ,  B82Y20/00 ,  G02F1/3523 ,  G02F1/3556

摘要： Low optical loss and simplified fabrication are achieved by a nonlinear reflector which incorporates one or more semiconductor quantum wells within a standard semiconductor quarter wave stack reflector. The nonlinear reflector provides an intensity dependent response which permits it to be used for saturable absorption directly in a main oscillating cavity of a laser. Saturation intensity of the nonlinear reflector and thereby related laser modelocking properties can be controlled by disposing the quantum well at a particular position in the reflector structure.

摘要翻译： 通过在标准半导体四分之一波长叠层反射器内结合有一个或多个半导体量子阱的非线性反射器来实现低光损耗和简化制造。 非线性反射器提供强度依赖响应，其允许其直接用于激光器的主振荡腔中的可饱和吸收。 可以通过将量子阱设置在反射器结构中的特定位置来控制非线性反射器的饱和强度和相关的激光锁模特性。