发明公开
EP0732739A1 Improvements in crystal substrate processing
失效
Verbesserungen bei der Herstellung von Kristallsubstraten
- 专利标题: Improvements in crystal substrate processing
- 专利标题(中): Verbesserungen bei der Herstellung von Kristallsubstraten
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申请号: EP96301377.6申请日: 1996-02-29
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公开(公告)号: EP0732739A1公开(公告)日: 1996-09-18
- 发明人: Ayliffe, Peter John , Harrison, Paul Mark , Geear, Martine Christopher , Parker, James Wilson , Peall, Robert George , Harcourt, Roger William
- 申请人: NORTHERN TELECOM LIMITED
- 申请人地址: World Trade Center of Montreal, 380 St. Antoine Street West 8th Floor Montreal, Quebec H2Y 3Y4 CA
- 专利权人: NORTHERN TELECOM LIMITED
- 当前专利权人: NORTHERN TELECOM LIMITED
- 当前专利权人地址: World Trade Center of Montreal, 380 St. Antoine Street West 8th Floor Montreal, Quebec H2Y 3Y4 CA
- 代理机构: Dennis, Mark Charles
- 优先权: GB9505001 19950311
- 主分类号: H01L23/14
- IPC分类号: H01L23/14 ; H01L21/48
摘要:
This disclosure relates to the fabrication of components on a single crystal substrate. A method is disclosed of overcoming the problems encountered in defining etched features on a silicon substrate. In particular, there is disclosed a method of producing a multichip module comprising a silicon substrate having surface features for the placement of components. An organic dielectric is applied to the substrate prior to the use of an etchant whereby interconnects can be defined.
公开/授权文献
- EP0732739B1 Improvements in crystal substrate processing 公开/授权日:2002-01-02
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