发明公开
EP0763851A2 Method of forming an asymmetric, graded-channel semiconductor device using a disposable spacer
失效
一种用于通过可拆卸的间隔件来生产具有非对称缓变沟道半导体器件的工艺
- 专利标题： Method of forming an asymmetric, graded-channel semiconductor device using a disposable spacer
- 专利标题（中）： 一种用于通过可拆卸的间隔件来生产具有非对称缓变沟道半导体器件的工艺
-
申请号： EP96113459.0申请日： 1996-08-22
-
公开(公告)号： EP0763851A2公开(公告)日： 1997-03-19
- 发明人: Dow, Diann M. , Davies, Robert B. , Wild, Andreas A. , Ilderem, Vida
- 申请人： MOTOROLA, INC.
- 申请人地址： 1303 East Algonquin Road Schaumburg, IL 60196 US
- 专利权人： MOTOROLA, INC.
- 当前专利权人： MOTOROLA, INC.
- 当前专利权人地址： 1303 East Algonquin Road Schaumburg, IL 60196 US
- 代理机构： Spaulding, Sarah Jane
- 优先权： US521504 19950830; US566320 19951201
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234 ; H01L29/78
摘要：
A method for forming a graded-channel field effect transistor includes providing a substrate (10) with an overlying gate electrode (14, 16). A spacer (23) is formed on only the drain side of the electrode. A graded-channel region (36) is formed aligned to the source side of the electrode while the spacer protects the drain side of the channel region. Source/drain regions (38) are formed, the spacer is removed, and then a drain extension region (40) is formed aligned to the drain side of the electrode.
公开/授权文献
信息查询
IPC分类:
