Electrode or wiring for a semiconductor device, an active matrix substrate and process for production thereof

发明公开

EP0768710A2 Electrode or wiring for a semiconductor device, an active matrix substrate and process for production thereof 失效

标题翻译： Herstellungsverfahrenfüreine Elektrode auf einem Substrat mit aktiver Matrix

请登陆查看更多内容

专利标题： Electrode or wiring for a semiconductor device, an active matrix substrate and process for production thereof
专利标题（中）： Herstellungsverfahrenfüreine Elektrode auf einem Substrat mit aktiver Matrix
申请号： EP96306683.2

申请日： 1996-09-13
公开(公告)号： EP0768710A2

公开(公告)日： 1997-04-16
发明人: Fukumoto, Yoshihiko
申请人： CANON KABUSHIKI KAISHA
申请人地址： 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo JP
专利权人： CANON KABUSHIKI KAISHA
当前专利权人： CANON KABUSHIKI KAISHA
当前专利权人地址： 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo JP
代理机构： Beresford, Keith Denis Lewis
优先权： JP236865/95 19950914; JP241939/96 19960912
主分类号： H01L21/768
IPC分类号： H01L21/768

Electrode or wiring for a semiconductor device, an active matrix substrate and process for production thereof

摘要：

A process for producing a semiconductor device comprises a step of polishing of a region of an electroconductive material serving as an electrode or a wiring line in an insulating layer formed on a semiconductor region, the region of the electroconductive material being electrically connected to the semiconductor region, wherein a region of another material is formed within the region of the electroconductive material to be polished. Also a semiconductor device having the region is provided. A process for producing an active matrix substrate comprises a step of polishing of picture element electrodes made of a metal provided on crossing portions of plural signal lines and plural scanning lines and a means for applying voltage to the picture elements, wherein a region of another material is formed within the region of the picture element electrode to be polished. An active matrix substrate has such picture element electrodes as mentioned above.

摘要（中）：

一种制造半导体器件的方法包括：在形成于半导体区域上的绝缘层中研磨用作电极或布线的导电材料的区域的步骤，导电材料的区域电连接到半导体区域其中在待抛光的导电材料的区域内形成另一种材料的区域。还提供了具有该区域的半导体器件。一种制造有源矩阵基板的方法包括：对由多个信号线和多条扫描线的交叉部分设置的金属构成的像素电极进行研磨的步骤和向该像素施加电压的装置，其中，另一种材料的区域形成在待研磨的像素电极的区域内。有源矩阵基板具有如上所述的像素电极。

公开/授权文献

EP0768710A3 Electrode or wiring for a semiconductor device, an active matrix substrate and process for production thereof 公开/授权日：1997-07-30

信息查询

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/768	...利用互连在器件中的分离元件间传输电流