发明授权
EP0801817B1 INSULATED GATE SEMICONDUCTOR DEVICES WITH IMPLANTS FOR IMPROVED RUGGEDNESS
失效
与绝缘栅功率半导体装置有用于提高强度植入物
- 专利标题： INSULATED GATE SEMICONDUCTOR DEVICES WITH IMPLANTS FOR IMPROVED RUGGEDNESS
- 专利标题（中）： 与绝缘栅功率半导体装置有用于提高强度植入物
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申请号： EP95939740.7申请日： 1995-11-02
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公开(公告)号： EP0801817B1公开(公告)日： 2003-04-23
- 发明人: BULUCEA, Constantin , BLANCHAR, Richard, A.
- 申请人： NATIONAL SEMICONDUCTOR CORPORATION
- 申请人地址： 1090 Kifer Road, M/S 16-135 Sunnyvale, CA 95086-3737 US
- 专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址： 1090 Kifer Road, M/S 16-135 Sunnyvale, CA 95086-3737 US
- 代理机构： Bowles, Sharon Margaret
- 国际公布： WO97016853 19970509
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/06 ; H01L27/02 ; H01L29/74
摘要：
Vertical planar and non-planar insulated gate semiconductor device cells having improved ruggedness under drain avalanche conditions are disclosed. The cells employ high concentration implants which are strategically located in the central cell regions. The implants are effective to concentrate the electric field intensity and avalanche current flow in the central cell region and to prevent current flow into the base of a parasitic bipolar transistor, thereby preventing activation of the transistor. Both surface-peaked and subsurface-peaked implants are disclosed.
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