Electrical charge neutralization effects are known to be factors that affect the dose or concentrations of beam treatment by high current implanters (11). Raising beam energies to 1 MeV and beyond requires an understanding of the effects of both charge stripping and charge neutralization as well as a numerically efficient model compensating for these effects. Charge stripping generates ions of a higher charge state and may cause the measured electronic current from a Faraday cup to overestimate the true particle current. The invention implements an analysis based on the concept of an effective charge state for an ion beam (19) and results in a more general interpretation that covers both the charge stripping effect as well as ion neutralization. Dose control using the disclosed techniques requires two adjustable parameters: an apparent cross section of interaction between the beam and particles in the beam path and the ratio of the final steady charge state to the initial charge state.