公开(公告)号：EP0893944A1

公开(公告)日：1999-01-27

申请号：EP98305258.0

申请日：1998-07-02

申请人： EATON CORPORATION

发明人： Benveniste, Victor Maurice ,  Sinclair, Frank ,  Chen, Jiong

IPC分类号： H05H3/02 ,  H01J37/317

CPC分类号： H01J37/026 ,  H01J2237/31701

摘要： An improved ion beam neutralizer (22) is provided for neutralizing the electrical charge of an ion beam (28) output from an extraction aperture (50). The neutralizer comprises a source of water (52); a vaporizer (54) connected to the source of water; a mass flow controller (56) connected to the vaporizer; and an inlet (60) connected to the mass flow controller. The vaporizer (54) converts water from the source (52) from a liquid state to a vapor state. The mass flow controller (56) receives water vapor from the vaporizer (54) and meters the volume of water vapor output by a mass flow controller outlet (66). The inlet (60) is provided with an injection port (68) located proximate the ion beam extraction aperture (50) and receives the metered volume from the outlet (66). The injection port (68) is positioned near the extraction aperture so that the ion beam and the water vapor interact to neutralize the ion beam. The improved ion beam neutralizer (22) is especially effective in low energy (less than ten kilo-electron volts (10 KeV)) beam applications.

摘要翻译： 提供改进的离子束中和器（22），用于中和从提取孔（50）输出的离子束（28）的电荷。 中和器包括水源（52）; 连接到水源的蒸发器（54）; 连接到蒸发器的质量流量控制器（56） 和连接到质量流量控制器的入口（60）。 蒸发器（54）将来自源（52）的水从液态转换为蒸汽状态。 质量流量控制器（56）接收来自蒸发器（54）的水蒸汽，并且测量由质量流量控制器出口（66）输出的水蒸气的体积。 入口（60）设置有位于离子束抽出孔（50）附近并从出口（66）接收计量体积的注入口（68）。 注入口（68）位于提取孔附近，使得离子束和水蒸汽相互作用以中和离子束。 改进的离子束中和器（22）在低能量（小于十千伏电压（10KeV）））的应用中特别有效。

公开(公告)号：EP0780877A2

公开(公告)日：1997-06-25

申请号：EP96308758.0

申请日：1996-12-04

申请人： EATON CORPORATION

发明人： Blake, Julian Gaskill ,  Becker, Robert ,  Chipman, David ,  Jones, Mary ,  Menn, Lyudmila ,  Sinclair, Frank ,  Stone, Dale Keith

IPC分类号： H01J37/02 ,  H01J37/30 ,  H01J37/317

CPC分类号： H01J37/3002 ,  H01J37/3171 ,  H01J2237/022

摘要： A method of capturing and removing contaminant particles (14) moving within an evacuated interior region of an ion beam implanter (10) is disclosed. The steps of the method include: providing a particle collector (74) having a surface to which contaminant particles really adhere; securing the particle collector to the implanter such that particle adhering surface is in fluid communication to the contaminant particles moving within the interior region; and removing the particle collector from the implanter after a predetermined period of time. An ion implanter (10) in combination with a particle collector (74) for trapping and removing contaminant particles moving in an evacuated interior region of the implanter traversed by an ion beam is also disclosed, the particle collector including a surface to which the contaminant particles readily adhere and securement means ((76, 78) for releasably securing the particle collector to the implanter such that the particle adhering surface is in fluid communication with the evacuated interior region of the implanter.

摘要翻译： 俘获和清除不纯粒子（14）在一个离子束注入机的抽真空的内部区域内移动的方法（10）游离缺失盘。 该方法的步骤包括：提供具有表面到哪个污染物颗粒附着真正的粒子收集器（74）; 固定所述粒子收集器的注入机的搜索没有坚持颗粒表面是在所述内部区域内移动所述污染物颗粒流体连通; 和预定的时间周期之后，去除从注入的粒子收集器。 与离子注入器的粒子收集器（10）（74），用于捕获并除去上通过在离子束穿过所述注入机的抽真空的内部区域移动在污染物颗粒组合因此盘游离缺失，粒子收集器包括一个表面，以哪个污染物颗粒 容易粘附和用于可释放地固定在粒子收集器，以检查所做的粒子粘附表面是在与真空管注入器的内部区域流体连通的植入固定装置（（76，78）。

公开(公告)号：EP0780877A3

公开(公告)日：1999-02-10

申请号：EP96308758.0

申请日：1996-12-04

申请人： EATON CORPORATION

发明人： Blake, Julian Gaskill ,  Becker, Robert ,  Chipman, David ,  Jones, Mary ,  Menn, Lyudmila ,  Sinclair, Frank ,  Stone, Dale Keith

IPC分类号： H01J37/02 ,  H01J37/30 ,  H01J37/317

CPC分类号： H01J37/3002 ,  H01J37/3171 ,  H01J2237/022

摘要： A method of capturing and removing contaminant particles (14) moving within an evacuated interior region of an ion beam implanter (10) is disclosed. The steps of the method include: providing a particle collector (74) having a surface to which contaminant particles really adhere; securing the particle collector to the implanter such that particle adhering surface is in fluid communication to the contaminant particles moving within the interior region; and removing the particle collector from the implanter after a predetermined period of time. An ion implanter (10) in combination with a particle collector (74) for trapping and removing contaminant particles moving in an evacuated interior region of the implanter traversed by an ion beam is also disclosed, the particle collector including a surface to which the contaminant particles readily adhere and securement means ((76, 78) for releasably securing the particle collector to the implanter such that the particle adhering surface is in fluid communication with the evacuated interior region of the implanter.

公开(公告)号：EP0854494A2

公开(公告)日：1998-07-22

申请号：EP98300195.9

申请日：1998-01-13

申请人： EATON CORPORATION

发明人： Chen, Heng-Gung ,  Sinclair, Frank ,  Sugitani, Michiro

IPC分类号： H01J37/304 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J2237/304 ,  H01J2237/31703

摘要： Electrical charge neutralization effects are known to be factors that affect the dose or concentrations of beam treatment by high current implanters (11). Raising beam energies to 1 MeV and beyond requires an understanding of the effects of both charge stripping and charge neutralization as well as a numerically efficient model compensating for these effects. Charge stripping generates ions of a higher charge state and may cause the measured electronic current from a Faraday cup to overestimate the true particle current. The invention implements an analysis based on the concept of an effective charge state for an ion beam (19) and results in a more general interpretation that covers both the charge stripping effect as well as ion neutralization. Dose control using the disclosed techniques requires two adjustable parameters: an apparent cross section of interaction between the beam and particles in the beam path and the ratio of the final steady charge state to the initial charge state.

摘要翻译： 已知电荷中和作用是影响高电流注入机束束处理剂量或浓度的因素（11）。 将光束能量提高到1 MeV及以上需要了解电荷剥离和电荷中和的影响以及补偿这些影响的数字效率模型。 电荷剥离产生较高电荷状态的离子，并可能导致来自法拉第杯的测量电子电流过高估计真实的粒子电流。 本发明基于离子束（19）的有效电荷状态的概念来实现分析，并且导致涵盖电荷剥离效应以及离子中和的更一般的解释。 使用所公开的技术的剂量控制需要两个可调参数：光束与光束路径中的粒子之间的相互作用的明显横截面以及最终稳定电荷状态与初始充电状态的比率。

公开(公告)号：EP0686995A1

公开(公告)日：1995-12-13

申请号：EP95304036.7

申请日：1995-06-12

申请人： EATON CORPORATION

发明人： Hirokawa, Suguru ,  Sinclair, Frank ,  DeMario, Neil Evan

IPC分类号： H01J37/317 ,  H01J37/304

CPC分类号： H01L21/68728 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/202 ,  H01J2237/31703 ,  H01L21/68764 ,  H01L21/68771

摘要： An ion implantation device equipped with a high-speed driving device 16 which causes rotation of the a disk 15 that supports semiconductor wafers 25 around it outer periphery. A center position of said disk is the axis of said rotation of the high speed rotation. A low-speed driving device 17 causes relative movement of the disk in a radial direction. The ion implantation device further has a control means which calculates the movement speed of the aforementioned low-speed driving device with reference to different spacings between wafers about the outer periphery and the distance R from the center of the disk to the ion implantation position, and controls said low speed scan speed V so that ions are uniformly implanted into the aforementioned wafers.

摘要翻译： 一种配备有高速驱动装置16的离子注入装置，其使围绕其外周的半导体晶片25支撑的盘15旋转。 所述盘的中心位置是高速旋转的所述旋转的轴线。 低速驱动装置17使盘的径向相对移动。 离子注入装置还具有控制装置，该控制装置根据围绕外周的晶片间的距离以及从盘的中心到离子注入位置的距离R来计算上述低速驱动装置的移动速度，以及 控制所述低速扫描速度V，使得离子均匀地注入上述晶片。