发明公开
EP0855737A3 Integrated processing for an etch module using a hard mask technique
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Ätzverfahrenmit einer harten Maske
- 专利标题： Integrated processing for an etch module using a hard mask technique
- 专利标题（中）： Ätzverfahrenmit einer harten Maske
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申请号： EP97310627.1申请日： 1997-12-24
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公开(公告)号： EP0855737A3公开(公告)日： 1998-12-23
- 发明人: Ouellet, Luc , Azelmad, Abdallah
- 申请人： MITEL CORPORATION
- 申请人地址： 350 Legget Drive, P.O. Box 13089 Kanata Ontario K2K 1X3 CA
- 专利权人： MITEL CORPORATION
- 当前专利权人： MITEL CORPORATION
- 当前专利权人地址： 350 Legget Drive, P.O. Box 13089 Kanata Ontario K2K 1X3 CA
- 代理机构： Gemmell, Peter Alan, Dr.
- 优先权： CA2193905 19961224
- 主分类号： H01L21/033
- IPC分类号： H01L21/033 ; H01L21/31
摘要：
A method of fabricating a semiconductor device includes etching hcles through at least one deposited layer to an underlying structure. A hard mask is deposited on an upper surface of a device to be etched, the mask is patterned with the aid of a photoresist and holes are etched in the hard mask. After removal of the photoresist, contact or via holes are etched through the patterned hard mask in the deposited layer(s) to reach the underlying structure.
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