The light-emitting diode device of the present invention includes an active layer (17), a p-type contact layer (22), a Schottky electrode (23) and an ohmic electrode (24). The active layer is formed over an n-type semiconductor substrate (11). The contact layer (22) is formed over the active layer (17). The Schottky electrode (23) is selectively formed on a portion of the contact layer (22) and makes Schottky contact with said portion of the contact layer (22). The ohmic electrode (24) surrounds the Schottky electrode (23) on the contact layer (22), is electrically connected to the Schottky electrode (23), and transmits the light emitted from the active layer (17). Alternatively, the Schottky electrode may be replaced by a pad electrode (42A) in ohmic contact with the contact layer (22,41A), a high-resistance region (43) being formed as a current blocking layer under the pad electrode (42A).