发明公开
- 专利标题： PROCESS FOR THE PRODUCTION OF SEMICONDUCTOR DEVICE
- 专利标题（中）： 生产半导体器件的方法
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申请号： EP97911513.6申请日： 1997-11-11
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公开(公告)号： EP0933802A1公开(公告)日： 1999-08-04
- 发明人: AKAHORI, Takashi , ISHIZUKA, Shuichi, 202, Shiroyama New Heights , ENDO, Shunichi , AOKI, Takeshi , HIRATA, Tadashi, 1004, Dragon Mansion
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： 3-6 Akasaka 5-chome Minato-ku, Tokyo 107 JP
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： 3-6 Akasaka 5-chome Minato-ku, Tokyo 107 JP
- 代理机构： HOFFMANN - EITLE
- 优先权： JP32091296 19961114
- 国际公布： WO9821745 19980522
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice.
A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl 3 gas. Thereafter, when the surface of the wafer is irradiated with O 2 plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO 2 or the like may be substituted for the conductive film.
A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl 3 gas. Thereafter, when the surface of the wafer is irradiated with O 2 plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO 2 or the like may be substituted for the conductive film.
公开/授权文献
- EP0933802B1 PROCESS FOR THE PRODUCTION OF SEMICONDUCTOR DEVICE 公开/授权日：2002-04-17
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