SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:EP4368749A1

    公开(公告)日:2024-05-15

    申请号:EP22837607.5

    申请日:2022-06-30

    IPC分类号: C23F1/12 H01L21/3065

    CPC分类号: H01L21/3065 C23F1/12

    摘要: In one exemplary embodiment, a substrate processing method includes: (a) providing a substrate including a metal-containing film and a mask provided on the metal-containing film; (b) forming a protective film on the mask; and (c) etching the metal-containing film after (b). (c) includes (c1) forming a second metal-containing substance from a first metal-containing substance contained in the metal-containing film by using a first processing gas including a fluorine-containing gas, and (c2) removing the second metal-containing substance by using a second processing gas including a precursor.