公开(公告)号：EP0933802B1

公开(公告)日：2002-04-17

申请号：EP97911513.6

申请日：1997-11-11

申请人： TOKYO ELECTRON LIMITED

发明人： AKAHORI, Takashi ,  ISHIZUKA, Shuichi, 202, Shiroyama New Heights ,  ENDO, Shunichi ,  AOKI, Takeshi ,  HIRATA, Tadashi, 1004, Dragon Mansion

IPC分类号： H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/31138 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process for the production of a semiconductor device, which enables the practical use of a carbon fluoride film (hereinafter referred to as "CF film") as the interlayer insulator film. The deposition of a conductive film such as a TiN film (41) on a CF film (4) and the patternwise deposition of a resist film (42) on the film (41) are conducted successively, followed by the etching of the TiN film (41) with BCl3 gas or the like. Although the subsequent irradiation of the resulting wafer with O2 plasma makes not only the CF film but also the resist film (42) etched chemically, predetermined holes can be formed by virtue of the action of the TiN film (41) as a mask. Then, wiring is formed of aluminum or the like on the surface of the CF film (4). The TiN film (41) is effective in making the wiring and the CF film (4) adhere tightly to each other and serves as a part of the wiring. An insulator film made of SiO2 or the like may be used as the mask instead of the conductive film.

公开(公告)号：EP0933806A1

公开(公告)日：1999-08-04

申请号：EP97912453.4

申请日：1997-11-13

申请人： TOKYO ELECTRON LIMITED

发明人： AKAHORI, Takashi ,  TOZAWA, Masaki ,  NAITO, Yoko ,  NAKASE, Risa ,  ISHIZUKA, Shuichi, 202, Shiroyama New Heights ,  SAITO, Masahide ,  HIRATA, Tadashi, 1004, Dragon Mansion

IPC分类号： H01L21/314 ,  H01L21/31 ,  H01L21/3065 ,  C23C16/50

CPC分类号： C23C16/4405

摘要： It is an object of the present invention to shorten the time required for the cleaning of a fluorine containing carbon film adhered in a vacuum vessel and to protect the surface of a transfer table when the cleaning is carried out.
After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O 2 gas is produced, and the C-C and C-F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O 2 gas penetrates into the CF film at places where the C-C and C-F bonds have been cut, to react with C of the CF film to form CO 2 to scatter. On the other hand, F scatters as F 2 . Thus, the CF film is removed.

公开(公告)号：EP0933802A1

公开(公告)日：1999-08-04

申请号：EP97911513.6

申请日：1997-11-11

申请人： TOKYO ELECTRON LIMITED

发明人： AKAHORI, Takashi ,  ISHIZUKA, Shuichi, 202, Shiroyama New Heights ,  ENDO, Shunichi ,  AOKI, Takeshi ,  HIRATA, Tadashi, 1004, Dragon Mansion

IPC分类号： H01L21/3065

CPC分类号： H01L21/31144 ,  H01L21/31138 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice.
A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl 3 gas. Thereafter, when the surface of the wafer is irradiated with O 2 plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO 2 or the like may be substituted for the conductive film.

摘要翻译： 本发明的一个目的是提供一种含氟碳膜（CF膜）的方法，该方法可以实施含氟碳膜的层间绝缘膜。 在CF膜4上形成导电膜例如TiN膜41.在其上形成抗蚀剂膜42的图案之后，用例如BCl 3气体对TiN膜41进行蚀刻。 之后，当用O2等离子体照射晶片的表面时，CF膜被化学蚀刻，并且抗蚀剂膜42也被蚀刻。 但是，由于TiN膜41用作掩模，所以可以形成预定的孔。 尽管在CF膜4的表面上形成了铝等的互连层，但是TiN膜41用作用于将互连层粘附到CF膜4并且用作互连层的一部分的粘附层。 作为掩模，可以用SiO 2等的绝缘膜代替导电膜。