发明公开
EP0935256A1 Test method for writable nonvolatile semiconductor memory device
失效
Prüfverfahrenfürprogrammierbare nichtflüchtigeHalbleiterspeichervorrichtung
- 专利标题： Test method for writable nonvolatile semiconductor memory device
- 专利标题（中）： Prüfverfahrenfürprogrammierbare nichtflüchtigeHalbleiterspeichervorrichtung
-
申请号： EP99105448.7申请日： 1994-02-08
-
公开(公告)号： EP0935256A1公开(公告)日： 1999-08-11
- 发明人: Kumakura, Sinsuke , Yamazaki, Hirokazu , Watanabe, Hisayoshi , Kasa, Yasushi
- 申请人： FUJITSU LIMITED
- 申请人地址： 1-1, Kamikodanaka 4-chome, Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： 1-1, Kamikodanaka 4-chome, Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
- 代理机构： Stebbing, Timothy Charles
- 优先权： JP5713593 19930317
- 主分类号： G11C29/00
- IPC分类号： G11C29/00 ; H01L21/02
摘要：
A test method for a writable nonvolatile semiconductor memory, comprising: a writing step for writing data; an aging step wherein the nonvolatile semiconductor memory is placed under prescribed aging conditions; and a verification step where data is read out and compared with the data written in the writing step for verification. The test method is characterised in that the aging step incorporates a step of forming a coating film for alleviating the stress applied to the nonvolatile semiconductor memory during assembly.
公开/授权文献
信息查询
