发明公开
EP0980098A1 Semiconducting material substrate for use in integrated circuits manufacturing processes and production method thereof
审中-公开
半导体材料的衬底用于集成电路和制造这种衬底的方法中的制造工艺使用
- 专利标题： Semiconducting material substrate for use in integrated circuits manufacturing processes and production method thereof
- 专利标题（中）： 半导体材料的衬底用于集成电路和制造这种衬底的方法中的制造工艺使用
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申请号： EP98830500.9申请日： 1998-08-11
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公开(公告)号： EP0980098A1公开(公告)日： 2000-02-16
- 发明人: Pio, Federico
- 申请人： STMicroelectronics S.r.l.
- 申请人地址： Via C. Olivetti, 2 20041 Agrate Brianza (Milano) IT
- 专利权人： STMicroelectronics S.r.l.
- 当前专利权人： STMicroelectronics S.r.l.
- 当前专利权人地址： Via C. Olivetti, 2 20041 Agrate Brianza (Milano) IT
- 代理机构： Dini, Roberto, Dr. Ing.
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; B28D5/00 ; B44B7/00
摘要：
A semiconducting material substrate for use in integrated circuits manufacturing processes, where said substrate has a discoidal shape with two surfaces, i.e. a bottom surface and a top surface, respectively, and said substrate is also provided with marking indicia to indicate its crystallographic orientation. According to the present invention discoidal surfaces (2, 3; 12, 13) of said substrate (1; 11) have an axial symmetry and marking indicia (4, 5; 14) are executed at least on one of said discoidal surfaces (2, 3; 12, 13).
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