发明公开
EP1003222A1 Improved field-effect transistor and corresponding manufacturing method
审中-公开
Verbesserter Feldeffekttransistor和Verfahren zu dessen Herstellung
- 专利标题： Improved field-effect transistor and corresponding manufacturing method
- 专利标题（中）： Verbesserter Feldeffekttransistor和Verfahren zu dessen Herstellung
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申请号： EP98830694.0申请日： 1998-11-19
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公开(公告)号： EP1003222A1公开(公告)日： 2000-05-24
- 发明人: Pio, Federico , Zuliani, Paola
- 申请人： STMicroelectronics S.r.l.
- 申请人地址： Via C. Olivetti, 2 20041 Agrate Brianza (Milano) IT
- 专利权人： STMicroelectronics S.r.l.
- 当前专利权人： STMicroelectronics S.r.l.
- 当前专利权人地址： Via C. Olivetti, 2 20041 Agrate Brianza (Milano) IT
- 代理机构： Botti, Mario
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L21/336 ; H01L21/266
摘要：
Field effect transistor (1) integrated on a semiconductor substrate (4) with a respective active area (8) comprising:
a region of source (2) and a region of drain (3) formed in the semiconductor substrate (4),
a channel region (5) interposed between said regions of source (2) and of drain (3) having a predefined nominal width (W N ), wherein said channel region (5) has an effective width (Weff) defined by a variable profile of doping.
a region of source (2) and a region of drain (3) formed in the semiconductor substrate (4),
a channel region (5) interposed between said regions of source (2) and of drain (3) having a predefined nominal width (W N ), wherein said channel region (5) has an effective width (Weff) defined by a variable profile of doping.
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