发明公开
- 专利标题： Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element
- 专利标题（中）： 磁阻元件和制造工艺和磁阻磁头对磁性记录装置和磁电阻存储器元件
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申请号： EP00104409.8申请日： 2000-03-02
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公开(公告)号： EP1033764A3公开(公告)日： 2001-01-03
- 发明人: Sakakima, Hiroshi , Sugita, Yasunari , Satomi, Mitsuo , Kawawake, Yasuhiro , Hiramoto, Masayoshi , Matsukawa, Nozomu
- 申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 申请人地址： 1006, Ohaza Kadoma Kadoma-shi, Osaka 571-8501 JP
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： 1006, Ohaza Kadoma Kadoma-shi, Osaka 571-8501 JP
- 代理机构： Schwabe - Sandmair - Marx
- 优先权： JP5407799 19990302; JP8330599 19990326; JP13528099 19990517; JP18872399 19990702; JP23505399 19990823; JP35432799 19991214
- 主分类号： H01L43/10
- IPC分类号： H01L43/10 ; H01F10/32 ; H01F41/18 ; H01F41/30 ; G11B5/39 ; G11C11/16
摘要：
A magnetoresistance effect element (100) includes a free layer (5), in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer (4), and a first pinned layer (3) provided on a side opposite to the free layer of the first non-magnetic layer (4), in which a magnetization direction of the first pinned layer (3) is not easily rotated in response to the external magnetic field. At least one of the first pinned layer (3) and the free layer (5) includes a first metal magnetic film (32) contacting the first non-magnetic layer (4), and a first oxide magnetic film (31).
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