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1.发明授权
公开(公告)号：EP1033764B1
公开(公告)日：2006-06-28
申请号：EP00104409.8
申请日：2000-03-02
发明人： Sakakima, Hiroshi , Sugita, Yasunari , Satomi, Mitsuo , Kawawake, Yasuhiro , Hiramoto, Masayoshi , Matsukawa, Nozomu
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3925 , G11B2005/3996 , H01F10/3268 , H01F41/18 , H01F41/302 , H01L43/08
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公开(公告)号：EP1134815A3
公开(公告)日：2001-10-31
申请号：EP01113584.5
申请日：1998-09-28
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10
摘要： A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an α-Fe 2 O 3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
摘要翻译： 本发明的磁阻效应装置包括多层膜。 多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，它们以此顺序直接或通过下层设置在非磁性基板上。 反铁磁膜包含α-Fe2O3膜。 多层膜的表面粗糙度为约0.5nm或更小。
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3.发明公开Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same 失效磁阻效应器件，磁阻效应型磁头，存储器件及使用其的放大器件
公开(公告)号：EP1126531A3
公开(公告)日：2001-10-17
申请号：EP01102181.3
申请日：1995-05-02
CPC分类号： H03F7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3925 , G11B2005/3996 , G11C11/15 , G11C11/16 , G11C11/5607 , G11C2211/5616 , H01F10/3281 , H01L27/222 , H01L43/10
摘要： A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
摘要翻译： 本发明的磁阻效应器件包括：衬底; 以及形成在基板上的多层结构。 多层结构包括硬磁性膜，软磁性膜和用于将硬磁性膜与软磁性膜分离的非磁性金属膜。 硬磁性膜的磁化曲线具有良好的正方形特征，并且硬磁性膜的磁化易磁化轴的方向与待检测的磁场的方向基本一致。
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4.发明公开
公开(公告)号：EP0930624A1
公开(公告)日：1999-07-21
申请号：EP99100579.4
申请日：1999-01-13
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
摘要： An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB) 2 O x layer, wherein: 0 denotes an oxygen atom; 2.8 t = (Ra+Ro) / (√2•(Rb+Ro)) (where Ra, Rb and Ro denote the ion radii of the atoms A, B and O, respectively)
satisfies 0.8摘要翻译： 交换耦联薄膜的本发明包括其被设置成与所述铁磁性层为钉扎铁磁性层的磁化方向，该锁定层包括（AB）2 O x层，worin一个铁磁层和钉扎层全部：0表示 到氧原子; 2.8
（其中Ra，Rb和滚装表示原子A，B和O的离子半径分别为> SATIS外资企业0.8 -
公开(公告)号：EP0791916A3
公开(公告)日：1998-02-25
申请号：EP97102827.9
申请日：1997-02-21
IPC分类号： G11B5/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.
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公开(公告)号：EP0791916A2
公开(公告)日：1997-08-27
申请号：EP97102827.9
申请日：1997-02-21
IPC分类号： G11B5/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.
摘要翻译： 薄膜磁头包括在上屏蔽部分和下屏蔽部分之间的上屏蔽部分，下屏蔽部分和磁阻装置部分。 磁阻器件部分通过导电层连接到上屏蔽部分和下屏蔽部分。 电流经由上屏蔽和下屏蔽流过磁阻器件部分。
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公开(公告)号：EP0529673A1
公开(公告)日：1993-03-03
申请号：EP92114842.5
申请日：1992-08-31
IPC分类号： G11B5/85
摘要： In order to form low and uniform projections on a surface of a thin film, when forming the thin film of metal or alloy on a substrate by means of vacuum deposition, a substrate is employed in which projections having a height not less than 10 nm are formed on the surface thereof at a density of not more than 1 x 10⁶ projections/mm², the initial incident angle of atoms upon the substrate, which serve to mainly constitute the thin film, being set at not less than 50° with respect to the normal line of the substrate, and the temperature of the substrate set at not less than 100°C.
摘要翻译： 为了在薄膜的表面上形成低均匀的突起，当通过真空沉积在基板上形成金属或合金薄膜时，使用基板，其中高度不小于10nm的突起为 在其表面上以不大于1×10 6个突起/ mm 2的密度形成，用于主要构成薄膜的基底上原子的初始入射角设定为不小于 相对于基板的法线为50°，基板的温度为100℃以上。
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8.发明公开Method for manufacturing perpendicular magnetic recording medium 失效Verfahren zur Herstellung einesAufzeichnungsträgersmit senkrechter Magnetisierung。
公开(公告)号：EP0329116A1
公开(公告)日：1989-08-23
申请号：EP89102609.8
申请日：1989-02-15
IPC分类号： G11B5/84
CPC分类号： G11B5/85 , Y10S428/90
摘要： In manufacturing perpendicular magnetic recording medium wherein a magnetic layer containing Co and Cr as main contents of a running substrate of polymer film incident angle (φ f ) of vaporized atom to form said magnetic layer is 30° or larger at the final part of the film formation to improve manufacturing capacity, and magnetic layer (119) is heated after forming the magnetic layer in an oxygen-containing atmosphere.
摘要翻译： 在制造垂直磁记录介质中，其中包含Co和Cr作为主要成分的主要成分的聚合物膜的蒸发原子的入射角（phi）以形成所述磁性层的磁性层在膜的最后部分为30°或更大 形成以提高制造能力，并且在含氧气氛中形成磁性层之后加热磁性层（119）。
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9.发明授权
公开(公告)号：EP0905802B1
公开(公告)日：2004-11-24
申请号：EP98118338.7
申请日：1998-09-28
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10
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公开(公告)号：EP0759619B1
公开(公告)日：2001-12-12
申请号：EP96113285.9
申请日：1996-08-20
CPC分类号： B82Y25/00 , B82Y10/00 , G11B2005/3996 , G11C11/14
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