发明公开
EP1037281A1 Capacitor trench-top dielectric for self-aligned device isolation
有权
和有源区的制造方法的浅坟绝缘自对准于深沟槽
- 专利标题： Capacitor trench-top dielectric for self-aligned device isolation
- 专利标题（中）： 和有源区的制造方法的浅坟绝缘自对准于深沟槽
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申请号： EP00103964.3申请日： 2000-02-25
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公开(公告)号： EP1037281A1公开(公告)日： 2000-09-20
- 发明人: Divakaruni, Rama , Grüning, Ulrike , Kim, Byeong Y. , Mandelman, Jack , Nesbit, Larry , Radens, Carl
- 申请人： International Business Machines Corporation , Infineon Technologies AG
- 申请人地址： New Orchard Road Armonk, NY 10504 US
- 专利权人： International Business Machines Corporation,Infineon Technologies AG
- 当前专利权人： International Business Machines Corporation,Infineon Technologies AG
- 当前专利权人地址： New Orchard Road Armonk, NY 10504 US
- 代理机构： Teufel, Fritz, Dipl.-Phys.
- 优先权： US271124 19990317
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/8242
摘要：
A semiconductor device including a substrate. At least one pair of deep trenches is arranged in the substrate. A collar lines at least a portion of a wall of each deep trench. A deep trench fill fills each deep trench. A buried strap extends completely across each deep trench over each deep trench fill and each collar. An isolation region is arranged between the deep trenches. A dielectric region overlies each buried strap in each deep trench.
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