发明公开
EP1085784A3 Semiconductor device, semiconductor electret condenser microphone, and method of producing semiconductor electret condenser microphone
审中-公开
一种半导体器件，Halbleiterelektret电容话筒及其制造Halbleiterelektret电容传声器的方法
- 专利标题： Semiconductor device, semiconductor electret condenser microphone, and method of producing semiconductor electret condenser microphone
- 专利标题（中）： 一种半导体器件，Halbleiterelektret电容话筒及其制造Halbleiterelektret电容传声器的方法
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申请号： EP00308009.0申请日： 2000-09-14
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公开(公告)号： EP1085784A3公开(公告)日： 2003-04-23
- 发明人: Okawa, Shigeaki , Ohkoda, Toshiyuki , Ohbayashi, Yoshiaki , Yasuda, Mamoru , Saeki, Shinichi , Osawa, Shuji
- 申请人： SANYO ELECTRIC CO., LTD. , HOSIDEN CORPORATION
- 申请人地址： 2-5-5, Keihan-Hondori Moriguchi-shi, Osaka 570-0083 JP
- 专利权人： SANYO ELECTRIC CO., LTD.,HOSIDEN CORPORATION
- 当前专利权人： SANYO ELECTRIC CO., LTD.,HOSIDEN CORPORATION
- 当前专利权人地址： 2-5-5, Keihan-Hondori Moriguchi-shi, Osaka 570-0083 JP
- 代理机构： Nicholls, Michael John
- 优先权： JP26137499 19990916
- 主分类号： H04R19/00
- IPC分类号： H04R19/00
摘要：
A stationary electrode layer 12 is formed on a semiconductor substrate 11, and a vibrating diaphragm 16 is disposed on spacers 14. The vibrating diaphragm 16 is placed so as to protrude from an end of the semiconductor substrate 11, and terminal pads 20 to 23 are placed with being exposed from the vibrating diaphragm 16.
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