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    Semiconductor device
    2.
    发明公开
    Semiconductor device 审中-公开
    Halbleitergerät

    公开(公告)号：EP1091618A2

    公开(公告)日：2001-04-11

    申请号：EP00308761.6

    申请日：2000-10-04

    申请人： SANYO ELECTRIC CO., LTD. ,  HOSIDEN CORPORATION

    发明人： Okawa, Shigeaki ,  Ohkoda, Toshiyuki ,  Ohbayashi, Yoshiaki ,  Yasuda, Mamoru ,  Saeki, Shinichi ,  Osawa, Shuji

    IPC分类号： H04R23/00

    CPC分类号： H04R19/005 ,  H04R19/04

    摘要： First, a stationary electrode layer is formed over a semiconductor substrate and an integrated network is composed in a circuit element area around the stationary electrode layer by electrode wiring forming each circuit element. A spacer is arranged on a passivation film in plural places. A dummy island is formed in an area between the circuit element area and the stationary electrode layer area. Supply potential Vcc is applied to the dummy island and ground potential GND is applied to a P + -type separated area.

    摘要翻译： 首先，在半导体衬底上形成固定电极层，并且通过形成每个电路元件的电极布线，在固定电极层周围的电路元件区域中形成集成网络。 在多个位置上的钝化膜上设置间隔物。 在电路元件区域和固定电极层区域之间的区域中形成虚拟岛。 供电电位Vcc施加到虚拟岛，接地电位GND施加到P +型分离区域。

    Semiconductor device
    3.
    发明公开
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：EP1091617A3

    公开(公告)日：2004-10-20

    申请号：EP00308744.2

    申请日：2000-10-04

    申请人： SANYO ELECTRIC CO., LTD. ,  HOSIDEN CORPORATION

    发明人： Okawa, Shigeaki ,  Ohkoda, Toshiyuki ,  Ohbayashi, Yoshiaki ,  Yasuda, Mamoru ,  Saeki, Shinichi ,  Osawa, Shuji

    IPC分类号： H04R19/00

    CPC分类号： H04R19/005 ,  H04R19/04

    摘要： A fixed electrode layer 12 is formed on a semiconductor substrate 11. A vibrating film is formed on the fixed electrode layer through a spacer 14. Since the vibrating film is a light-permeable film, in order to prevent the malfunction of an electronic circuit formed in the semiconductor substrate by incident light, the region where the electronic circuit is to be formed is covered with a shield metal 33.

    摘要翻译： 固定电极层12形成在半导体基板11上。振动膜通过隔板14形成在固定电极层上。由于振动膜是透光膜，为了防止形成的电子电路的故障 在入射光的半导体基板中，形成电子电路的区域被屏蔽金属33覆盖。

    Semiconductor device
    6.
    发明公开
    Semiconductor device 审中-公开
    Halbleitervorrichtung

    公开(公告)号：EP1091617A2

    公开(公告)日：2001-04-11

    申请号：EP00308744.2

    申请日：2000-10-04

    申请人： SANYO ELECTRIC CO., LTD. ,  HOSIDEN CORPORATION

    发明人： Okawa, Shigeaki ,  Ohkoda, Toshiyuki ,  Ohbayashi, Yoshiaki ,  Yasuda, Mamoru ,  Saeki, Shinichi ,  Osawa, Shuji

    IPC分类号： H04R19/00

    CPC分类号： H04R19/005 ,  H04R19/04

    摘要： A fixed electrode layer 12 is formed on a semiconductor substrate 11. A vibrating film is formed on the fixed electrode layer through a spacer 14. Since the vibrating film is a light-permeable film, in order to prevent the malfunction of an electronic circuit formed in the semiconductor substrate by incident light, the region where the electronic circuit is to be formed is covered with a shield metal 33.

    摘要翻译： 固定电极层12形成在半导体基板11上。通过间隔件14在固定电极层上形成振动膜。由于振动膜是透光膜，为了防止形成电子电路的故障 在入射光的半导体衬底中，要形成电子电路的区域被屏蔽金属33覆盖

    Method for manufacturing a semiconductor silicon carbide on insulator substrate (SOI) and apparatus therefore
    9.
    发明公开
    Method for manufacturing a semiconductor silicon carbide on insulator substrate (SOI) and apparatus therefore 有权
    用于实施该制造方法的半导体硅绝缘体上衬底（SOI）的工艺和设备

    公开(公告)号：EP1333482A2

    公开(公告)日：2003-08-06

    申请号：EP03250583.6

    申请日：2003-01-30

    申请人： Osaka Prefecture ,  Hosiden Corporation

    发明人： Izumi, Katsutoshi ,  Nakao, Motoi ,  Ohbayashi, Yoshiaki ,  Mine, Keiji ,  Hirai, Seisaku ,  Jobe, Fumihiko ,  Tanaka, Tomoyuki

    IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/205 ,  C23C16/02 ,  C23C16/32 ,  H01L21/324

    CPC分类号： H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

    摘要： [Purpose] A single crystal silicon carbide thin film is inexpensively and easily formed on an SOI substrate.
    [Constitution] The manufacturing method comprises the steps of:

    (1) placing in a furnace 200 an SOI substrate 100 having a surface silicon layer 130 of thickness no greater than 10nm and having a buried insulator layer 120, and increasing the temperature of the atmosphere within furnace 200 while supplying a mixture of hydrogen gas G1 and hydrocarbon gas G2 into furnace 200 so that surface silicon layer 130 is metamorphosed into single crystal silicon carbide thin film 140;
    (2) depositing a carbon thin film 150 on thin film 140 by excessively carrying out the first step;
    (3) replacing mixed gas (G1+G2) with an inert gas G4 containing oxygen gas G3 mixed in a predetermined ratio and heating SOI substrate 100 to no less than 550°C to remove carbon thin film 150 through etching;
    (4) replacing inert gas G4 containing oxygen gas G3 with a pure inert gas G4 and increasing the temperature of the atmosphere within furnace 200 to a predetermined temperature; and
    (5) supplying hydrogen gas G1 and a silane-based gas G5 into furnace 200 and maintaining the predetermined temperature of the atmosphere so that a new single crystal silicon carbide thin film 160 grows on the surface of said SOI substrate 100.

    摘要翻译： [目的]的单晶碳化硅薄膜是在SOI衬底的廉价且容易地形成。 [构成]的制造方法，包括以下步骤：（1）放置在炉200上的SOI衬底100，其具有厚度不大于10nm的表面硅层130和具有掩埋绝缘体层120，并增加环境的温度 炉200内，同时氢气G1和烃气G2的混合物供给到炉200所以没表面硅层130被变态为单晶碳化硅薄膜140; （2）通过过度进行第一步上的薄膜140上沉积碳薄膜150; （3）用惰性气体置换的混合气体（G1 + G2），以氧气气体G3 G4包含混合在一个比预定的加热和SOI衬底100至不小于550℃，通过蚀刻以去除碳薄膜150; （4）替换惰性气体G4含氧气体G3与纯惰性气体G4和炉200内增加气氛的温度到预定的温度; 和（5）供给氢气G1和硅烷类气体G5入炉200和维护的气氛的预定温度，以便做一个新的单晶碳化硅薄膜160生长的SOI衬底的表面上的所述第100个