发明公开
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: EP00308744.2申请日: 2000-10-04
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公开(公告)号: EP1091617A3公开(公告)日: 2004-10-20
- 发明人: Okawa, Shigeaki , Ohkoda, Toshiyuki , Ohbayashi, Yoshiaki , Yasuda, Mamoru , Saeki, Shinichi , Osawa, Shuji
- 申请人: SANYO ELECTRIC CO., LTD. , HOSIDEN CORPORATION
- 申请人地址: 2-5-5, Keihan-Hondori Moriguchi-shi, Osaka 570-0083 JP
- 专利权人: SANYO ELECTRIC CO., LTD.,HOSIDEN CORPORATION
- 当前专利权人: SANYO ELECTRIC CO., LTD.,HOSIDEN CORPORATION
- 当前专利权人地址: 2-5-5, Keihan-Hondori Moriguchi-shi, Osaka 570-0083 JP
- 代理机构: Nicholls, Michael John
- 优先权: JP28254499 19991004
- 主分类号: H04R19/00
- IPC分类号: H04R19/00
摘要:
A fixed electrode layer 12 is formed on a semiconductor substrate 11. A vibrating film is formed on the fixed electrode layer through a spacer 14. Since the vibrating film is a light-permeable film, in order to prevent the malfunction of an electronic circuit formed in the semiconductor substrate by incident light, the region where the electronic circuit is to be formed is covered with a shield metal 33.
公开/授权文献
- EP1091617A2 Semiconductor device 公开/授权日:2001-04-11
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