发明授权
- 专利标题： MOSFET HAVING SELF-ALIGNED GATE AND BURIED SHIELD
- 专利标题（中）： 具有自调整MOSFET器件具有埋入SHIELD
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申请号： EP99937597.5申请日： 1999-07-28
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公开(公告)号： EP1103074B1公开(公告)日： 2010-01-06
- 发明人: HEBERT, François
- 申请人： Rovec Acquisitions Ltd. L.L.C.
- 申请人地址： 1209 Orange Street Wilmington, DE 19801 US
- 专利权人： Rovec Acquisitions Ltd. L.L.C.
- 当前专利权人： Rovec Acquisitions Ltd. L.L.C.
- 当前专利权人地址： 1209 Orange Street Wilmington, DE 19801 US
- 代理机构： Cross, Rupert Edward Blount
- 优先权： US130192 19980805
- 国际公布： WO2000008674 20000217
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/788 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L27/148 ; H01L29/00 ; H01L29/768 ; H01L21/336 ; H01L21/8234 ; H01L21/20 ; H01L29/78
摘要：
A MOSFET has a buried shield plate under the gate and over the drain with the gate being formed on the periphery of the buried shield plate as a self-aligned structure with minimal or no overlap of the gate over the shield plate. Methods of fabricating the MOSFET are disclosed.
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