公开(公告)号：EP1103074B1

公开(公告)日：2010-01-06

申请号：EP99937597.5

申请日：1999-07-28

申请人： Rovec Acquisitions Ltd. L.L.C.

发明人： HEBERT, François

IPC分类号： H01L29/76 ,  H01L29/788 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/148 ,  H01L29/00 ,  H01L29/768 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/20 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L21/2815 ,  H01L29/402 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66659 ,  H01L29/7835

摘要： A MOSFET has a buried shield plate under the gate and over the drain with the gate being formed on the periphery of the buried shield plate as a self-aligned structure with minimal or no overlap of the gate over the shield plate. Methods of fabricating the MOSFET are disclosed.

公开(公告)号：EP1016139B1

公开(公告)日：2010-07-21

申请号：EP98939228.7

申请日：1998-08-05

申请人： Rovec Acquisitions Ltd. L.L.C.

发明人： HEBERT, François ,  PARKER, James, R. ,  NG, Daniel, Szehim ,  BARTLOW, Howard, D.

IPC分类号： H01L23/58 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L29/7816 ,  H01L23/552 ,  H01L23/585 ,  H01L27/088 ,  H01L29/402 ,  H01L29/7801 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A linear MOSFET device includes a shield plate (26) between a drain and an overlying gate.