发明公开
- 专利标题： INTEGRIERTER SPEICHER MIT EINEM DIFFERENTIELLEN LESEVERSTÄRKER
- 专利标题（英）： Integrated memory with differential read amplifier
- 专利标题（中）： 与差动读出放大器集成内存
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申请号： EP99969821.0申请日： 1999-09-13
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公开(公告)号： EP1118081A1公开(公告)日： 2001-07-25
- 发明人: RÖHR, Thomas , BÖHM, Thomas , HÖNIGSCHMID, Heinz , BRAUN, Georg
- 申请人： Infineon Technologies AG
- 申请人地址： St.-Martin-Strasse 53 81669 München DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： St.-Martin-Strasse 53 81669 München DE
- 代理机构： Fischer, Volker, Dipl.-Ing.
- 优先权： DE19844479 19980928
- 国际公布： WO0019442 20000406
- 主分类号： G11C11/22
- IPC分类号： G11C11/22 ; G11C7/12 ; G11C7/22
摘要：
The invention relates to a memory having writable memory cells (MC) as well as a bit line pair (BL, /BL) which links the memory cells (MC) with a differential read amplifier (SA). A control unit (CTR) serves to precharge the bit lines in several stages before a memory cell (MC) is conductively connected to one of the bit lines (BL) during a read access. During a write access the control unit (CTR) carries out no more than a part of the steps provided for a read access and required for precharging the bit lines, before the read amplifier transmits data to the bit line pair (BL, /BL).
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