发明公开
- 专利标题： Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same
- 专利标题（中）： 的磁阻效应器件和磁头提供的提交，存储和放大装置
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申请号： EP01102181.3申请日： 1995-05-02
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公开(公告)号： EP1126531A2公开(公告)日： 2001-08-22
- 发明人: Sakakima, Hiroshi , Irie, Yousuke , Satomi, Mitsuo , Kawawake, Yasuhiro
- 申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 申请人地址： 1006, Ohaza Kadoma Kadoma-shi, Osaka 571-8501 JP
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： 1006, Ohaza Kadoma Kadoma-shi, Osaka 571-8501 JP
- 代理机构： Balsters, Robert
- 优先权： JP9325794 19940502; JP12507294 19940607; JP14922994 19940630; JP17682294 19940728; JP17807894 19940729; JP18748494 19940809; JP19045794 19940812; JP30361594 19941207; JP31314794 19941216; JP5306795 19950313; JP5163095 19950310
- 主分类号： H01L43/10
- IPC分类号： H01L43/10 ; G11B5/39 ; G11C11/15 ; H03F15/00
摘要：
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
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