发明公开
EP1154037A1 Methods for improving chemical vapor deposition processing
审中-公开
Verfahren zur Verbesserung eines CVD-Prozesses
- 专利标题： Methods for improving chemical vapor deposition processing
- 专利标题（中）： Verfahren zur Verbesserung eines CVD-Prozesses
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申请号： EP01304238.7申请日： 2001-05-11
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公开(公告)号： EP1154037A1公开(公告)日： 2001-11-14
- 发明人: Robertson, Robert , Kollrack, Mike , Lee, Angela , Takehara, Takako , Feng, Jeff , Shang, Quanyuan , Law, Kam
- 申请人： Applied Materials, Inc.
- 申请人地址： 3050 Bowers Avenue Santa Clara, California 95054 US
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： 3050 Bowers Avenue Santa Clara, California 95054 US
- 代理机构： Allard, Susan Joyce
- 优先权： US569551 20000512
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; B08B7/00
摘要：
A multi-step process is used to condition a chemical vapor deposition chamber after cleaning and between successive depositions by removing fluorine residues from the chamber with a hydrogen plasma, and subsequently depositing a solid compound in the chamber to encapsulate any particulates remaining in the chamber.
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