公开(公告)号：EP0661731B1

公开(公告)日：2000-05-31

申请号：EP94118349.3

申请日：1994-11-22

申请人： APPLIED MATERIALS, INC.

发明人： Law, Kam ,  Robertson, Robert ,  Feng, Guofu Jeff

IPC分类号： H01L21/205 ,  H01L21/336

CPC分类号： H01L29/66765 ,  C23C16/4404 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/905

公开(公告)号：EP0630990A3

公开(公告)日：1996-01-03

申请号：EP94109548.1

申请日：1994-06-21

申请人： APPLIED MATERIALS, INC.

发明人： Robertson, Robert ,  Kollrack, Marc Michael ,  Lee, Angela T. ,  Law, Kam ,  Maydan, Dan

IPC分类号： C23C16/44 ,  C23C16/50 ,  C23C16/56 ,  B05D3/06 ,  B05D3/04

CPC分类号： C23C16/56 ,  C23C16/509

摘要： A method of limiting sticking of a body (38, substrate) to a susceptor (18) after the body (38) has been coated with a layer in a deposition chamber (12) by plasma chemical vapor deposition includes subjecting the coated body (38) to a plasma of an inactive gas, e.g., hydrogen, nitrogen, argon or ammonia, which does not adversely affect the coating and does not add additional layers to the body (38). After the coated body (38) is subjected to the plasma of the inactive gas, the body (38) is separated from the susceptor (18).

公开(公告)号：EP1154037A1

公开(公告)日：2001-11-14

申请号：EP01304238.7

申请日：2001-05-11

申请人： Applied Materials, Inc.

发明人： Robertson, Robert ,  Kollrack, Mike ,  Lee, Angela ,  Takehara, Takako ,  Feng, Jeff ,  Shang, Quanyuan ,  Law, Kam

IPC分类号： C23C16/44 ,  B08B7/00

CPC分类号： H01J37/32862 ,  C23C16/4404 ,  C23C16/4405

摘要： A multi-step process is used to condition a chemical vapor deposition chamber after cleaning and between successive depositions by removing fluorine residues from the chamber with a hydrogen plasma, and subsequently depositing a solid compound in the chamber to encapsulate any particulates remaining in the chamber.

摘要翻译： 使用多步法在清洁之后和连续沉积之间通过用氢等离子体除去室中的氟残留物，随后在室中沉积固体化合物以包封残留在室中的任何颗粒物来调节化学气相沉积室。

公开(公告)号：EP0608633B1

公开(公告)日：1999-03-03

申请号：EP93310555.3

申请日：1993-12-24

申请人： Applied Materials, Inc.

发明人： Law, Kam S. ,  Robertson, Robert ,  Lou, Pamela ,  Kollrack, Marc Michael ,  Lee, Angela ,  Maydan, Dan

IPC分类号： C23C16/44 ,  H01L21/84

CPC分类号： H01L21/67167 ,  C23C16/24 ,  C23C16/345 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765

公开(公告)号：EP0661731A3

公开(公告)日：1995-11-15

申请号：EP94118349.3

申请日：1994-11-22

申请人： APPLIED MATERIALS, INC.

发明人： Law, Kam ,  Robertson, Robert ,  Feng, Guofu Jeff

IPC分类号： H01L21/205 ,  H01L21/22 ,  H01L21/336

CPC分类号： H01L29/66765 ,  C23C16/4404 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/905

摘要： A method of depositing layers (54, 56) of intrinsic amorphous silicon and doped amorphous silicon sequentially on a substrate (50) in the same CVD chamber without incurring a dopant contamination problem. The method can be carried out by first depositing an additional layer of a dielectric insulating material prior to the deposition process of the intrinsic amorphous silicon layer (54). The additional layer of insulating material deposited on the substrate should have a thickness such that residual insulating material coated on the chamber walls is sufficient to cover the residual dopants on the chamber walls left by the deposition process of the previous substrate. This provides a clean environment for the next deposition process of an intrinsic amorphous silicon layer (54) on a substrate (50) in the same CVD chamber.

公开(公告)号：EP0630990A2

公开(公告)日：1994-12-28

申请号：EP94109548.1

申请日：1994-06-21

申请人： APPLIED MATERIALS, INC.

发明人： Robertson, Robert ,  Kollrack, Marc Michael ,  Lee, Angela T. ,  Law, Kam ,  Maydan, Dan

IPC分类号： C23C16/44 ,  C23C16/50 ,  C23C16/56 ,  B05D3/06 ,  B05D3/04

CPC分类号： C23C16/56 ,  C23C16/509

摘要： A method of limiting sticking of a body (38, substrate) to a susceptor (18) after the body (38) has been coated with a layer in a deposition chamber (12) by plasma chemical vapor deposition includes subjecting the coated body (38) to a plasma of an inactive gas, e.g., hydrogen, nitrogen, argon or ammonia, which does not adversely affect the coating and does not add additional layers to the body (38). After the coated body (38) is subjected to the plasma of the inactive gas, the body (38) is separated from the susceptor (18).

摘要翻译： （38）已被涂覆有在沉积室（12）通过等离子体化学气相沉积包括使包覆体（38层限制的主体（38，衬底）的粘到身体后的基座（18）的方法 ），以惰性气体，例如，氢气，氮气，氩气或氨，其中不会不利地影响涂层，并且不向所述主体（38）添加额外的层的等离子体。 上述包覆体（38）进行的惰性气体的等离子体以后，主体（38）从基座（18）分离。

公开(公告)号：EP0608633A2

公开(公告)日：1994-08-03

申请号：EP93310555.3

申请日：1993-12-24

申请人： APPLIED MATERIALS, INC.

发明人： Law, Kam S. ,  Robertson, Robert ,  Lou, Pamela ,  Kollrack, Marc Michael ,  Lee, Angela ,  Maydan, Dan

IPC分类号： C23C16/44 ,  H01L21/84

CPC分类号： H01L21/67167 ,  C23C16/24 ,  C23C16/345 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765

摘要： Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber (120) under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0.5 Torr and substrate temperatures of about 250-370 o C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers (122, 124, 126) which are part of a single multichamber vacuum system (111).

摘要翻译： 可以在相同的反应条件下，在相同的室（120）中以高沉积速率在薄膜晶体管上进行多层薄膜沉积到玻璃基板上以形成薄膜晶体管。 我们已经发现，通过使用至少0.5托的压力和约250-370℃的衬底温度的化学气相沉积，可以在相同的室中沉积顺序的氮化硅和非晶硅薄层。 随后沉积的不同薄膜也可以沉积在作为单个多室真空系统（111）的一部分的分离的化学气相沉积室（122,124,126）中。

公开(公告)号：EP0630990B1

公开(公告)日：1999-01-07

申请号：EP94109548.1

申请日：1994-06-21

申请人： APPLIED MATERIALS, INC.

发明人： Robertson, Robert ,  Kollrack, Marc Michael ,  Lee, Angela T. ,  Law, Kam ,  Maydan, Dan

IPC分类号： C23C16/44 ,  C23C16/50 ,  C23C16/56 ,  B05D3/06 ,  B05D3/04

CPC分类号： C23C16/56 ,  C23C16/509

公开(公告)号：EP0608633A3

公开(公告)日：1996-05-01

申请号：EP93310555.3

申请日：1993-12-24

申请人： APPLIED MATERIALS, INC.

发明人： Law, Kam S. ,  Robertson, Robert ,  Lou, Pamela ,  Kollrack, Marc Michael ,  Lee, Angela ,  Maydan, Dan

IPC分类号： C23C16/44 ,  H01L21/84

CPC分类号： H01L21/67167 ,  C23C16/24 ,  C23C16/345 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765

摘要： Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber (120) under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0.5 Torr and substrate temperatures of about 250-370 o C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers (122, 124, 126) which are part of a single multichamber vacuum system (111).

公开(公告)号：EP0630989A3

公开(公告)日：1996-01-03

申请号：EP94109547.3

申请日：1994-06-21

申请人： APPLIED MATERIALS, INC.

发明人： Robertson, Robert ,  Kollrack, Marc Michael ,  Lee, Angela T. ,  Takehara, Takako ,  Feng, Guofu Jeff ,  Connolly, Robert ,  Law, Kam ,  Maydan, Dan

IPC分类号： C23C16/44 ,  C23C16/50 ,  C23C16/02 ,  B05D3/06 ,  B05D3/04

CPC分类号： C23C16/509 ,  C23C16/0245

摘要： The present invention is directed to a method of improving the interface between a surface and a layer which is deposited on the surface. The surface can be the surface of a body (38) or the surface of a layer deposited on a body (38). The surface is subjected to the plasma of an inactive gas which does not adversely affect the surface or deposit a layer thereon. Then the surface is subjected to a plasma of a deposition gas which causes the deposition gas to decompose and deposit a layer on the surface.