发明公开
- 专利标题： ERROR CORRECTION CIRCUIT AND METHOD FOR A MEMORY DEVICE
- 专利标题（中）： 纠错电路和方法储存设施EIENER
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申请号： EP00935982.9申请日： 2000-05-16
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公开(公告)号： EP1192544A1公开(公告)日： 2002-04-03
- 发明人: WALTERS, Donald, Monroe, Jr.
- 申请人： ADVANCED MICRO DEVICES INC.
- 申请人地址： One AMD Place,Mail Stop 68 Sunnyvale,California 94088-3453 US
- 专利权人： ADVANCED MICRO DEVICES INC.
- 当前专利权人： ADVANCED MICRO DEVICES INC.
- 当前专利权人地址： One AMD Place,Mail Stop 68 Sunnyvale,California 94088-3453 US
- 代理机构： Sanders, Peter Colin Christopher (GB)
- 优先权： US314576 19990518; US314575 19990518; US314574 19990518
- 国际公布： WO0070459 20001123
- 主分类号： G06F11/10
- IPC分类号： G06F11/10
摘要：
An error correction circuit and method for a memory device use an error correcting block code such as a Hamming code to detect and correct errors, if any, in the data bytes. The error correction circuit and method are capable of improving the speed of error correction to reduce delays in the external data access time.
公开/授权文献
- EP1192544B1 ERROR CORRECTION CIRCUIT AND METHOD FOR A MEMORY DEVICE 公开/授权日：2003-07-23
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