Invention Publication
EP1202349A3 Semiconductor module and method of manufacturing the same 审中-公开
半导体模块及其制造方法

Semiconductor module and method of manufacturing the same
Abstract:
A first metal film 14 made of a Cu plated film is formed on a radiation substrate 13A made of A1, and an island 15 exposed from a back surface of a semiconductor device 10 is adhered thereto. At that time, the back surface of the semiconductor device 10 is brought into contact with contact areas, and a first opening portion OP is opened larger than an arranging area of the semiconductor device 10. Accordingly, the cleaning can be executed via the first opening portion OP exposed from peripheries of the semiconductor device 10. In addition, the heat generated from semiconductor elements 16 can be radiated excellently from the island 15 via a second supporting member 13A.
Public/Granted literature
Information query
Patent Agency Ranking
0/0