发明公开
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： HALBLEITERBAUELEMENT
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申请号： EP01943848申请日： 2001-06-27
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公开(公告)号： EP1231640A4公开(公告)日： 2008-10-08
- 发明人: YOKOGAWA TOSHIYA , TAKAHASHI KUNIMASA , KITABATAKE MAKOTO , KUSUMOTO OSAMU , UENOYAMA TAKESHI , MIYAZAKI KOJI
- 申请人： MATSUSHITA ELECTRIC IND CO LTD
- 专利权人： MATSUSHITA ELECTRIC IND CO LTD
- 当前专利权人： MATSUSHITA ELECTRIC IND CO LTD
- 优先权： JP2000192182 2000-06-27
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/82 ; H01L21/8252 ; H01L27/04 ; H01L29/10 ; H01L29/15 ; H01L29/24 ; H01L29/36 ; H01L29/772 ; H01L29/78 ; H01L29/812 ; H01L29/872 ; H03D7/12 ; H03F3/60
摘要：
A first active region (12) comprising highly-doped n-type doped layers (12a) and undoped layers (12b) alternately and a second active region (13) comprising highly-doped p-type doped layers (13a) and undoped layers (13b) alternately are formed in this order from below on an SiC substrate (10). A Schottky diode (20) and a pMOSFET (30) are provided on the first active region (12), and an nMOSFET (40), a capacitor (50), and an inductor (60) are provided on the second active region (13). The Schottky diode (20) and the MOSFETs (30, 40) have a break-down voltage characteristic and a carrier drift characteristic attributed to the multilayer structure of the alternated d-doped layer and undoped layers and are integrated on the same substrate.
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IPC分类:
