公开(公告)号：EP1150338A4

公开(公告)日：2002-05-08

申请号：EP00966454

申请日：2000-10-12

申请人： MATSUSHITA ELECTRIC IND CO LTD

发明人： MIYAZAKI KOJI ,  KURACHI TOSHIAKI ,  TAKEDA MAMORU ,  SEKI KATSUSHI ,  CHO YOUNG-JAE

IPC分类号： H01J65/04

CPC分类号： H01J65/048

摘要： A device for driving an electrodeless discharge lamp comprises a transparent discharge container (1) with luminescent material enclosed therein, a coil (3) for producing an AC electromagnetic field to cause a discharge of the luminescent material, and a power supply (4) for supplying AC current to the coil (3). The coil (3) includes at least magnetic material and is arranged inside an outer wall of the discharge container (1). The luminescent material contains at least a rare gas and does not contain mercury.

公开(公告)号：EP1478213A4

公开(公告)日：2005-03-09

申请号：EP03705211

申请日：2003-02-17

申请人： MATSUSHITA ELECTRIC IND CO LTD

发明人： TAKAHASHI KENICHIRO ,  KOMINAMI SATOSHI ,  MIYAZAKI KOJI ,  KURACHI TOSHIAKI ,  SHIMOMURA YOKO

IPC分类号： H05B41/28 ,  H05B41/282 ,  H05B41/392 ,  H05B41/24

CPC分类号： H05B41/2806 ,  H05B41/2828 ,  H05B41/3924 ,  H05B41/3925 ,  H05B41/3927 ,  Y02B20/185 ,  Y02B20/22 ,  Y10S315/04

摘要： An electrodeless discharge lamp lighting device comprising an AC/DC converting unit (5) for converting ac voltage phase-controlled by a dimmer (2) into dc, a DC/AC converting unit (6) for converting an output from the AC/DC converting unit (5) into high frequency for application to a discharge lamp and intermittent driving of the discharge lamp, and a dimming control unit (7) for generating a dimming command signal that intermittently drives the converting unit (6) and outputting the dimming command signal to the converting unit (6) via a photo-coupler (9), the turning-on and turning-off timings of the above phase-controlled voltage being respectively synchronized with the on and off timings of driving of the DC/AC converting unit (6).

公开(公告)号：EP1231640A4

公开(公告)日：2008-10-08

申请号：EP01943848

申请日：2001-06-27

申请人： MATSUSHITA ELECTRIC IND CO LTD

发明人： YOKOGAWA TOSHIYA ,  TAKAHASHI KUNIMASA ,  KITABATAKE MAKOTO ,  KUSUMOTO OSAMU ,  UENOYAMA TAKESHI ,  MIYAZAKI KOJI

IPC分类号： H01L27/06 ,  H01L21/82 ,  H01L21/8252 ,  H01L27/04 ,  H01L29/10 ,  H01L29/15 ,  H01L29/24 ,  H01L29/36 ,  H01L29/772 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H03D7/12 ,  H03F3/60

CPC分类号： H01L21/8213 ,  H01L21/8252 ,  H01L27/0629 ,  H01L27/0688 ,  H01L29/105 ,  H01L29/157 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/7725 ,  H01L29/7838 ,  H01L29/812 ,  H01L29/872 ,  Y10S438/931 ,  Y10S438/957

摘要： A first active region (12) comprising highly-doped n-type doped layers (12a) and undoped layers (12b) alternately and a second active region (13) comprising highly-doped p-type doped layers (13a) and undoped layers (13b) alternately are formed in this order from below on an SiC substrate (10). A Schottky diode (20) and a pMOSFET (30) are provided on the first active region (12), and an nMOSFET (40), a capacitor (50), and an inductor (60) are provided on the second active region (13). The Schottky diode (20) and the MOSFETs (30, 40) have a break-down voltage characteristic and a carrier drift characteristic attributed to the multilayer structure of the alternated d-doped layer and undoped layers and are integrated on the same substrate.

摘要翻译： 包括交替地包括高掺杂n型掺杂层（12a）和未掺杂层（12b）的第一有源区（12）以及包括高掺杂p型掺杂层（13a）和未掺杂层（12b）的第二有源区（13） 13b）在SiC衬底（10）上从下方交替地形成。 在第一有源区域12上设置肖特基二极管20和pMOSFET30，在第二有源区域12上设置nMOSFET40，电容器50和电感器60。 13）。 肖特基二极管（20）和MOSFET（30,40）具有归因于交替d掺杂层和未掺杂层的多层结构的击穿电压特性和载流子漂移特性，并被集成在同一衬底上。