发明授权
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： EP01902733.3申请日： 2001-02-01
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公开(公告)号： EP1271654B1公开(公告)日： 2017-09-20
- 发明人: NAKAMURA, Katsumi , KUSUNOKI, Shigeru , NAKAMURA, Hideki
- 申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 申请人地址： 7-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100-8310 JP
- 专利权人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 当前专利权人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 当前专利权人地址： 7-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100-8310 JP
- 代理机构： Prüfer & Partner mbB Patentanwälte · Rechtsanwälte
- 国际公布： WO2002061845 20020808
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L29/40 ; H01L29/423 ; H01L29/45 ; H01L29/49 ; H01L29/66 ; H01L29/06 ; H01L29/08 ; H01L29/739
摘要：
A semiconductor device of the present invention is provided with a power device which has a semiconductor substrate having a first main surface and a second main surface that are opposed to each other and an insulating gate structure on the first main surface side, wherein a main current flows between the first main surface and the second main surface, that is to say, is provided with an insulating gate type MOS transistor structure wherein the thickness (t1) of the semiconductor substrate is no less than 50 mu m and no greater than 250 mu m and a low ON voltage and a high withstanding capacity against breakdown are implemented in the first main surface. Thereby, a low ON voltage, the maintaining of the withstanding capacity against breakdown and the reduction of a switching loss on the high voltage side can be implemented.
公开/授权文献
- EP1271654A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 公开/授权日：2003-01-02
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