发明公开
- 专利标题： CAPACITOR STACK STRUCTURE AND METHOD OF FABRICATING
- 专利标题（中）： 用于生产桩电容结构及堆叠电容器
-
申请号： EP01935012.3申请日： 2001-05-02
-
公开(公告)号： EP1279188A1公开(公告)日： 2003-01-29
- 发明人: WANG, Yun-Yu , JAMMY, Rajarao , KIMBALL, Lee, J. , KOTECKI, David, E. , LIAN, Jenny , LIN, Chenting , MILLER, John, A. , NAGEL, Nicholas , SHEN, Hua , WILDMAN, Horatio, S.
- 申请人： Infineon Technologies North America Corp. , International Business Machines Corporation
- 申请人地址： 1730 North First Street San Jose, CA 95112-4508 US
- 专利权人： Infineon Technologies North America Corp.,International Business Machines Corporation
- 当前专利权人： Infineon Technologies North America Corp.,International Business Machines Corporation
- 当前专利权人地址： 1730 North First Street San Jose, CA 95112-4508 US
- 代理机构： Epping Hermann & Fischer
- 优先权： US562556 20000502
- 国际公布： WO01084607 20011108
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second electrode portion is provided.
公开/授权文献
- EP1279188B1 CAPACITOR STACK STRUCTURE AND METHOD OF FABRICATING 公开/授权日：2006-09-06
信息查询
IPC分类:
