发明公开
EP1302964A1 Field-enhanced MIS/MIM electron emitters
审中-公开
Durch elektrisches Feld verbesserter Elektronenerzeuger mit MIS / MIM Struktur
- 专利标题： Field-enhanced MIS/MIM electron emitters
- 专利标题（中）： Durch elektrisches Feld verbesserter Elektronenerzeuger mit MIS / MIM Struktur
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申请号： EP02257067.5申请日： 2002-10-11
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公开(公告)号： EP1302964A1公开(公告)日： 2003-04-16
- 发明人: Sheng, Xia , Birecki, Henryk , Lam, Si-Ty , Kuo, Huei-Pei , Naberhuis, Steven Louis
- 申请人： Hewlett-Packard Company
- 申请人地址： 3000 Hanover Street Palo Alto, CA 94304 US
- 专利权人： Hewlett-Packard Company
- 当前专利权人： Hewlett-Packard Company
- 当前专利权人地址： 3000 Hanover Street Palo Alto, CA 94304 US
- 代理机构： Tollett, Ian
- 优先权： US975296 20011012
- 主分类号： H01J1/312
- IPC分类号： H01J1/312
摘要：
In an electron emitter (100, 200, 300) based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate (110, 210, 310) and an electron supply layer (120, 220, 320) formed on the conductive substrate (110, 210, 310). The electron supply layer (120, 220, 320), for example undoped polysilicon, has protrusions (130, 230, 330) formed on its surface. The sharpness and density of protrusions (130, 230, 330) may be controlled. Above the electron supply layer (120, 220, 320) and the protrusions, an insulator (140, 240, 340) may be formed thereby enclosing the protrusions (130, 230, 330). A top conductive layer (150, 250, 350) may be formed above the insulator (140, 240, 340). The enclosed protrusions (130, 230, 330) are relatively insensitive to vacuum contamination. The thinness of the insulator (140, 240, 340) allows high intensity electric fields at the protrusions (130, 230, 330) to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator (140, 240, 340) and thence through the top conductive layer (150, 250, 350) results. Furthermore, electron beam dispersion and divergence are minimized.
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