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1.发明公开Electron emitter device for data storage applications 审中-公开Datenspeichern的Elektronenemitter-VorrichtungfürAnwendungen
公开(公告)号：EP1328002A1
公开(公告)日：2003-07-16
申请号：EP03250114.0
申请日：2003-01-09
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1409 , H01J1/308
摘要： A field emission device 100, includes an emitter electrode 112, an extractor electrode 120, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier (114, 116), which is formed on the emitter electrode 112 and electrically couples with the extractor electrode 120 such that when an electric potential is placed between the emitter electrode 112 and the extractor electrode 120, a field emission of electrons is generated from an exposed surface of the semiconductor layer 116. Schottky metal 114 may be selected from conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer 116 placed on the Schottky metal is very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride.
摘要翻译： 场致发射器件100包括发射电极112，提取器电极120和利用形成在发射极112上的肖特基金属 - 半导体结或势垒（114,116）的固态场控制的发射极，以及 与提取器电极120电耦合，使得当在发射电极112和提取器电极120之间放置电位时，从半导体层116的暴露表面产生电子的场发射。肖特基金属114可以选自 可以在屏障上提供高电子池的导电层，例如铂，金，银或导电半导体层。 放置在肖特基金属上的半导体层116是n型非常弱的导电性并且具有宽的带隙，以便产生有助于在所提供的电子发射所必需的施加场产生诱导的负电子亲和力的条件。 一种类型的宽带隙材料可以选自二氧化钛或氮化钛。
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公开(公告)号：EP1174899A2
公开(公告)日：2002-01-23
申请号：EP01306009.0
申请日：2001-07-12
IPC分类号： H01J3/02
CPC分类号： H01J3/022
摘要： A self-aligned electron device (10) includes emitter (13), extraction electrode (17), and focus electrode (21) separated by dielectric layers, (11, 15, 19). A single cavity (23) extending through the electrodes and the dielectric layers and terminating at the emitter electrode (13) is formed by a single photolithography step and an etching process. A composite emitter (1) including a base (3) disposed on the emitter electrode (13) and a conical tip (5) disposed on the base (3) and terminating at a vertex V is formed in the cavity (23). The base (3) can be made from materials including titanium, chromium, or doped silicon. The tip (5) can be made from a wide variety of materials including a refractory metal, a metal alloy, a silicon alloy, a carbide, a nitride, or an electroformable metal. The cavity (23) and the composite emitter (1) are self-aligned relative to each other. The dielectric layers can be etched back to reduce or eliminate charge accumulation on cavity-facing portions (43, 45) of the dielectric layers. A composite layer including a dielectric and mechanical strength enhancement layer (15a, 19a) of silicon nitride or silicon carbide and a pull-back layer (15b, 19b) of silicon oxide on top of the etch stop layer can be used to form the dielectric layers.
摘要翻译： 自对准电子器件（10）包括由电介质层（11,15,19）分开的发射极（13），引出电极（17）和聚焦电极（21）。 延伸穿过电极和电介质层并终止于发射电极（13）的单个腔（23）通过单个光刻步骤和蚀刻工艺形成。 包括设置在发射极电极（13）上的基座（3）和设置在基座（3）上并终止于顶点V的圆锥形尖端（5）的复合发射极（1）形成在腔体（23）中。 基座（3）可以由包括钛，铬或掺杂硅的材料制成。 尖端（5）可以由多种材料制成，包括难熔金属，金属合金，硅合金，碳化物，氮化物或可电铸金属。 腔体（23）和复合发射体（1）相对于彼此自对准。 电介质层可以被回蚀以减少或消除电介质层的面向空腔的部分（43,45）上的电荷累积。 包括氮化硅或碳化硅的介电和机械强度增强层（15a，19a）以及在该蚀刻停止层的顶部上的氧化硅的拉回层（15b，19b）的复合层可用于形成介电层 层。
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3.发明公开Electronic offset compensation of the continuous composite track error signal in optical recording 失效在电动机Aufzeichnung的Elektronische Offset-Kompensation des kontinueierlichen Kompositspurfolgefehlersignals。
公开(公告)号：EP0502243A2
公开(公告)日：1992-09-09
申请号：EP91116596.7
申请日：1991-09-27
IPC分类号： G11B7/09
CPC分类号： G11B7/08517 , G11B7/094
摘要： When doing multitrack seek or a single track jump, the midpoint between the maximum and the minimum of the tracking error signal is determined. A peak detector (31) detects the positive peak and the negative peak. These maximum and minimum values are stored in a sample and hold circuit (32). A summing circuit (33) determines the midpoint between the maximum and the minimum of the tracking error signal. An operational amplifier (35) provides a true error signal to the servo control system (14) that provides the appropriate servo operating point. The invention is based on the fact that even though there is no absolute reference signal indicating the appropriate on-track position, the tracking servo system (14) obtains the track error signal over the whole range of positions relative to track center when doing a multitrack seek or a single track jump. The appropriate servo operating point is the midpoint between the maximum and the minimum of the track error signal. This provides compensation for level shifts due to factors such as beam displacement, or detector mispositioning, changes in read/write beam profile, and disk tilt. The present invention solves the key disadvantage of the continuous groove tracking method by eliminating tracking offsets without adding additional information to the disk. It also avoids imposing overhead on the data channel. It compensates for effects of disk tilt, detector misalignment, detector and amplifier offsets, and beam decentration due to fine tracking.
摘要翻译： 当进行多轨寻道或单轨道跳跃时，确定跟踪误差信号的最大值和最小值之间的中点。 峰值检测器（31）检测正峰值和负峰值。 这些最大值和最小值存储在采样和保持电路（32）中。 求和电路（33）确定跟踪误差信号的最大值和最小值之间的中点。 运算放大器（35）向提供适当的伺服操作点的伺服控制系统（14）提供真实的误差信号。 本发明基于以下事实：即使没有表示合适的在轨位置的绝对参考信号，跟踪伺服系统（14）在进行多轨时也可以在相对于轨道中心的整个位置范围内获得轨道误差信号 寻找或单轨道跳。 适当的伺服操作点是轨道误差信号的最大值和最小值之间的中点。 这提供了由于诸如光束位移或检测器错位，读/写光束轮廓和盘倾斜变化等因素造成的电平偏移的补偿。 本发明通过消除跟踪偏移来解决连续凹槽跟踪方法的关键缺点，而不向盘添加附加信息。 它也避免了在数据通道上施加开销。 它补偿磁盘倾斜，检测器未对准，检测器和放大器偏移的影响，以及由于精细跟踪导致的波束偏移。
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公开(公告)号：EP1251503A3
公开(公告)日：2004-09-08
申请号：EP02252462.3
申请日：2002-04-05
IPC分类号： G11B9/10
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/14 , G11B9/1409 , G11B9/1418
摘要： The present disclosure relates to a data storage device (100), comprising an electron emitter (108) adapted to generate electron beam current and emit electron beams, the electron emitter having a planar emission surface (718), and a storage medium (110) in proximity to the electron emitter, the storage medium having a storage area (400) that is capable of at least two distinct states that represent data, the state of the storage area being changeable in response to bombardment by an electron beam emitted by the electron emitter.
摘要翻译： 本发明涉及一种数据存储装置（100），包括适于产生电子束电流并发射电子束的电子发射器（108），该电子发射器具有平面发射表面（718）和存储介质（110） 所述存储介质具有能够表示数据的至少两个不同状态的存储区域（400），所述存储区域的状态可响应于由所述电子发射的电子束的轰击而改变 发射器。
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公开(公告)号：EP1328000A2
公开(公告)日：2003-07-16
申请号：EP03250113.2
申请日：2003-01-09
发明人： Birecki, Henryk , Binh, Vu Thien
摘要： A field emission planar electron emitter device 100 has an emitter electrode 112, an extractor electrode 120, and a planar emitter emission layer 214, electrically coupled to the emitter electrode 112 and the extractor electrode 120. The planar electron emitter 214 is configured to bias electron emission in a central region of the emission layer in preference to an outer region thereof. This biasing is achieved by fabricating the planar emitter emission layer so that it has an outer perimeter 216a that is thicker in depth than at an interior portion 216b of the planar emitter emission layer, which reduces electron beam emission at the outer perimeter when an electric field is applied between the emitter electrode 112 and the extractor electrode 120. The electric field draws emission electrons from the surface of the planar emitter emission layer 216 towards the extractor electrode 120 at a higher rate at the interior portion than at the outer perimeter. The planar electron emitter device 100 further includes a focusing electrode 124 electrically coupled to the planar electron emitter 216.
摘要翻译： 场发射平面电子发射器件100具有电耦合到发射极电极112和提取器电极120的发射极电极112，提取器电极120和平面发射极发射层214.平面电子发射器214被配置为偏置电子 在发光层的中心区域优先于其外部区域发射。 该偏置是通过制造平面发射器发射层来实现的，使得其具有比在平面发射极发射层的内部部分216b深的深度的外周长216a，这减少了当外界周边的电子束发射时 施加在发射电极112和提取器电极120之间。电场在内部部分比在外周边以更高的速率将发射电子从平面发射器发射层216的表面拉向提取器电极120。 平面电子发射器件100还包括电耦合到平面电子发射器216的聚焦电极124
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公开(公告)号：EP1251503A2
公开(公告)日：2002-10-23
申请号：EP02252462.3
申请日：2002-04-05
IPC分类号： G11B9/10
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/14 , G11B9/1409 , G11B9/1418
摘要： The present disclosure relates to a data storage device (100), comprising an electron emitter (108) adapted to generate electron beam current and emit electron beams, the electron emitter having a planar emission surface (718), and a storage medium (110) in proximity to the electron emitter, the storage medium having a storage area (400) that is capable of at least two distinct states that represent data, the state of the storage area being changeable in response to bombardment by an electron beam emitted by the electron emitter.
摘要翻译： 本公开涉及一种数据存储装置（100），包括适于产生电子束电流并发射电子束的电子发射器（108），所述电子发射器具有平面发射表面（718）和存储介质（110） 在电子发射器附近，存储介质具有能够表示数据的至少两个不同状态的存储区域（400），存储区域的状态可以响应于由电子发射的电子束的轰击而变化 发射器。
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公开(公告)号：EP1174899A3
公开(公告)日：2002-09-18
申请号：EP01306009.0
申请日：2001-07-12
IPC分类号： H01J3/02
CPC分类号： H01J3/022
摘要： A self-aligned electron device (10) includes emitter (13), extraction electrode (17), and focus electrode (21) separated by dielectric layers, (11, 15, 19). A single cavity (23) extending through the electrodes and the dielectric layers and terminating at the emitter electrode (13) is formed by a single photolithography step and an etching process. A composite emitter (1) including a base (3) disposed on the emitter electrode (13) and a conical tip (5) disposed on the base (3) and terminating at a vertex V is formed in the cavity (23). The base (3) can be made from materials including titanium, chromium, or doped silicon. The tip (5) can be made from a wide variety of materials including a refractory metal, a metal alloy, a silicon alloy, a carbide, a nitride, or an electroformable metal. The cavity (23) and the composite emitter (1) are self-aligned relative to each other. The dielectric layers can be etched back to reduce or eliminate charge accumulation on cavity-facing portions (43, 45) of the dielectric layers. A composite layer including a dielectric and mechanical strength enhancement layer (15a, 19a) of silicon nitride or silicon carbide and a pull-back layer (15b, 19b) of silicon oxide on top of the etch stop layer can be used to form the dielectric layers.
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公开(公告)号：EP1302963A3
公开(公告)日：2006-03-15
申请号：EP02256503.0
申请日：2002-09-19
IPC分类号： H01J1/312
摘要： A cold electron emitter (200, 200-1, 200-2) may include a heavily a p-doped semiconductor (230), and dielectric layer (245) , and a metallic layer (240) (p-D-M structure). A modification of this structure includes a heavily n+ doped region (220) below the p region (230) (n+-p-D-M structure). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible since under certain voltage drop across the dielectric layer (245) , effective negative electron affinity is realized for the quasi-equilibrium "cold" electrons accumulated in the depletion layer in the p-region (230) next to the dielectric layer (245). These electrons are generated as a result of the avalanche in the p-D-M structure or injection processes in the n+-p-D-M structure. These emitters are stable since they make use of relatively low extracting field in the vacuum region and are not affected by contamination and absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology.
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9.发明公开Field-enhanced MIS/MIM electron emitters 审中-公开Durch elektrisches Feld verbesserter Elektronenerzeuger mit MIS / MIM Struktur
公开(公告)号：EP1302964A1
公开(公告)日：2003-04-16
申请号：EP02257067.5
申请日：2002-10-11
IPC分类号： H01J1/312
摘要： In an electron emitter (100, 200, 300) based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate (110, 210, 310) and an electron supply layer (120, 220, 320) formed on the conductive substrate (110, 210, 310). The electron supply layer (120, 220, 320), for example undoped polysilicon, has protrusions (130, 230, 330) formed on its surface. The sharpness and density of protrusions (130, 230, 330) may be controlled. Above the electron supply layer (120, 220, 320) and the protrusions, an insulator (140, 240, 340) may be formed thereby enclosing the protrusions (130, 230, 330). A top conductive layer (150, 250, 350) may be formed above the insulator (140, 240, 340). The enclosed protrusions (130, 230, 330) are relatively insensitive to vacuum contamination. The thinness of the insulator (140, 240, 340) allows high intensity electric fields at the protrusions (130, 230, 330) to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator (140, 240, 340) and thence through the top conductive layer (150, 250, 350) results. Furthermore, electron beam dispersion and divergence are minimized.
摘要翻译： 在基于金属 - 绝缘体半导体或金属 - 绝缘体 - 金属发射体的电子发射器（100,200,300）中，场发射结构被封装在发射极结构内。 电子发射器可以包括形成在导电衬底（110,210,310）上的导电衬底（110,210,310）和电子供应层（120,220,320）。 电子供应层（120,220,320），例如未掺杂的多晶硅，在其表面上形成有突起（130,230,330）。 可以控制突起（130,230,330）的清晰度和密度。 在电子供应层（120,220,320）和突起之上，可以形成绝缘体（140,240,340），从而封闭突起（130,230,330）。 可以在绝缘体（140,240,340）上方形成顶部导电层（150,250,350）。 封闭的突起（130,230,330）对真空污染相对不敏感。 绝缘体（140,240,340）的薄度允许在低的施加电压下产生突起（130,230,330）处的高强度电场。 导致电场增强注入到绝缘体（140,240,340）中，从而通过顶部导电层（150,250,350）注入。 此外，电子束分散和发散最小化。
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公开(公告)号：EP1302961A2
公开(公告)日：2003-04-16
申请号：EP02256514.7
申请日：2002-09-19
IPC分类号： H01J1/308
CPC分类号： H01J1/308
摘要： A cold electron emitter (200, 200-1, 200-2, 200-3, 200-12, 200-13) may include a heavily n+ doped wide band gap (WBG) (220), a p-doped WBG region (230), and a low work function metallic layer (n + -p-M structure) (240). A modification of this structure includes heavily p+ doped (235) region between p region (230) and M metallic layer (n + -p-p+-M structure) (240). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible because the p-doped (230) or p+ heavily doped (235) WBG region acts as a negative electron affinity material when in contact with low work function metals. The injection emitters with the n + -p-M and n + -p-p+-M structures are stable since the emitters make use of relatively low extracting electric field and arc not affected by contamination and/or absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology.
摘要翻译： 冷电子发射体（200,200-1,200-2,200-3,200-12,200-13）可以包括重掺杂的宽带隙（WBG）（220），p掺杂的WBG区域（ 230）和低功函数金属层（n + -pM结构）（240）。 该结构的修改包括p区（230）和M金属层（n + -p-p + -M结构）（240）之间的重度p +掺杂（235）区。 这些结构可以将高电流发射与稳定（耐用）操作相结合。 高电流密度是可能的，因为当与低功函数金属接触时，p掺杂（230）或p +重掺杂（235）WBG区域充当负电子亲和材料。 具有n + -p-M和n + -p-p + -M结构的注入发射体是稳定的，因为发射体利用相对低的提取电场并且不受来自加速离子的污染和/或吸收的影响。 另外，这些结构可以用当前最先进的技术制造。
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