发明公开
EP1382716A2 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
审中-公开
具有高介电常数的蚀刻材料和方法的用于清洁的材料的沉积室具有高介电常数的方法
- 专利标题： Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
- 专利标题（中）： 具有高介电常数的蚀刻材料和方法的用于清洁的材料的沉积室具有高介电常数的方法
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申请号： EP03015605.3申请日： 2003-07-15
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公开(公告)号： EP1382716A2公开(公告)日： 2004-01-21
- 发明人: Ji, Bing , Motika, Stephen Andrew , Pearlstein, Ronald Martin , Karwacki, Eugene Joseph Jr. , Wu, Dingjun
- 申请人： AIR PRODUCTS AND CHEMICALS, INC.
- 申请人地址： 7201 Hamilton Boulevard Allentown, PA 18195-1501 US
- 专利权人： AIR PRODUCTS AND CHEMICALS, INC.
- 当前专利权人： AIR PRODUCTS AND CHEMICALS, INC.
- 当前专利权人地址： 7201 Hamilton Boulevard Allentown, PA 18195-1501 US
- 代理机构： Schwabe - Sandmair - Marx
- 优先权： US198509 20020718; US410803 20030410
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; C23F4/00
摘要：
A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.
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