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1.发明公开Free radical initiator in remote plasma chamber clean 审中-公开Radikalinitiatorfürdie Reinigung eines Kammers mittels einer entfernten Plasmaquelle
公开(公告)号：EP1741803A2
公开(公告)日：2007-01-10
申请号：EP06014078.7
申请日：2006-07-06
发明人： Ji, Bing
IPC分类号： C23C16/44
CPC分类号： C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： This invention relates to an improvement in the remote plasma cleaning of CVD process chambers and equipment from unwanted deposition byproducts formed on the walls, surfaces, etc. of such deposition process chambers and equipment. The improvement in the remote cleaning process resides in providing a free radical initiator downstream of the remote plasma generator employed for producing said plasma, said free radical initiator capable of forming free radicals in the presence of said plasma.
摘要翻译： 本发明涉及CVD沉积处理室和设备的壁，表面等上形成的不希望有的沉积副产物的CVD处理室和设备的远程等离子体清洗的改进。 远程清洁过程的改进在于在用于产生所述等离子体的远程等离子体发生器下游提供自由基引发剂，所述自由基引发剂能够在所述等离子体存在下形成自由基。
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2.发明公开
公开(公告)号：EP1637626A3
公开(公告)日：2006-07-26
申请号：EP05017851.6
申请日：2005-08-17
发明人： Ji, Bing , Motika, Stephen Andrew , Wu, Dingjun , Karwacki, Eugene Joseph, Jr. , Roberts, David Allen
IPC分类号： C23C16/44
CPC分类号： H01J37/32495 , B01J2219/024 , C23C16/4404
摘要： This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.
摘要翻译： 本发明涉及保护半导体处理设备（如等离子体反应器或反应性物种发生器）的内部部件免受蚀刻和/或清洁处理期间的物理和/或化学损害的设备和方法。 使用具有三种或更多种金属元素（例如钽酸锶铋（SBT））的分层超晶格材料在反应室的内部组件的表面上形成保护屏障。
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3.发明公开Low temperature CVD chamber cleaning using dilute NF3 审中-公开Verfahren zur CVD-Kammerreinigung unter Verwendung vonverdünntemNF3
公开(公告)号：EP1595973A1
公开(公告)日：2005-11-16
申请号：EP05010151.8
申请日：2005-05-10
IPC分类号： C23C16/44
CPC分类号： C23C16/4405 , B08B7/00 , B08B7/0035 , H01J37/32862
摘要： This invention relates to an improvement in in-situ cleaning of deposition byproducts in low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) chambers and hardware therein where process thermal budgets require minimization of the susceptor temperature rise. In the basic in situ PECVD process, a cleaning gas is introduced to the chamber for a time and temperature sufficient to remove films of the deposition byproducts and then the cleaning gas containing deposition byproducts removed from said PECVD chamber. The improvement for minimizing the susceptor temperature rise in a low temperature PECVD chamber during cleaning comprises:
employing a cleaning gas consisting essentially of NF 3 for cleaning and diluted with a sufficient amount of helium to carry away the heat developed during cleaning of the Plasma Enhanced Low Temperature Chemical Vapor Deposition chamber. The susceptor is maintained at 150 °C or below.摘要翻译： 本发明涉及在低温等离子体增强化学气相沉积（PECVD）室和其中的硬件中沉积副产物的原位清洗的改进，其中工艺热预算需要使基座温度升高最小化。 在基本的原位PECVD工艺中，将清洁气体引入室中足以去除沉积副产物的膜的时间和温度，然后将含有从所述PECVD室除去的沉积副产物的清洁气体引入。 在清洁过程中，使低温PECVD室中的基座温度升高最小化的改进包括：采用基本上由NF3组成的清洁气体进行清洗，并用足够量的氦稀释以携带在清洗等离子体增强低温期间产生的热量 化学气相沉积室。 感受器保持在150℃以下。
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4.发明公开Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas 审中-公开氟代氟磷酸荧光素荧光素荧光素氧化物在氟化物中的氧化反应
公开(公告)号：EP1498940A3
公开(公告)日：2005-08-24
申请号：EP04016212.5
申请日：2004-07-09
发明人： Ji, Bing , Motika, Stephen Andrew , Syvret, Robert George , Badowski, Peter R. , Karwacki, Eugene Joseph Jr. , Withers, Howard Paul, Jr. , Pearlstein, Ronald Martin
IPC分类号： H01L21/311 , C07C17/00
CPC分类号： H01L21/31116
摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.
摘要翻译： 本文公开了一种用于从层状基板蚀刻介电材料的混合物和方法。 具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的电介质材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。 本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基材接触。
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5.发明公开Method to protect internal components of semiconductor processing equipment 有权保护内部元件在植物中用于治疗的半导体的方法。
公开(公告)号：EP1637626A2
公开(公告)日：2006-03-22
申请号：EP05017851.6
申请日：2005-08-17
发明人： Ji, Bing , Motika, Stephen Andrew , Wu, Dingjun , Karwacki, Eugene Joseph, Jr. , Roberts, David Allen
IPC分类号： C23C16/44
CPC分类号： H01J37/32495 , B01J2219/024 , C23C16/4404
摘要： This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.
摘要翻译： 本发明涉及的装置和保护的半导体处理设备的内部部件的方法：诸如等离子体反应器或蚀刻和/或清洁过程期间针对物理和/或化学损坏一个反应物种产生。 分层的超晶格材料具有三个或以上的金属元素：例如钽酸锶铋（SBT）被用于形成一个反应室的内部部件的表面上的保护性屏障。
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公开(公告)号：EP1619269A2
公开(公告)日：2006-01-25
申请号：EP05016010.0
申请日：2005-07-22
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405 , H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： A process for enhancing the fluorine utilization of a process gas that is used in the removal of an undesired substance from a substrate is disclosed herein. In one embodiment, there is provided a process for enhancing the fluorine utilization of a process gas comprising a fluorine source comprising: adding a hydrogen source to the process gas in an amount sufficient to provide a molar ratio ranging from about 0.01 to about 0.99 of hydrogen source to fluorine source.
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7.发明公开Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials 审中-公开具有高介电常数的蚀刻材料和方法的用于清洁的材料的沉积室具有高介电常数的方法
公开(公告)号：EP1382716A3
公开(公告)日：2004-07-07
申请号：EP03015605.3
申请日：2003-07-15
发明人： Ji, Bing , Motika, Stephen Andrew , Pearlstein, Ronald Martin , Karwacki, Eugene Joseph Jr. , Wu, Dingjun
CPC分类号： C23C16/4405 , B08B7/00 , B08B7/0035
摘要： A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.
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8.发明公开Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials 审中-公开具有高介电常数的蚀刻材料和方法的用于清洁的材料的沉积室具有高介电常数的方法
公开(公告)号：EP1382716A2
公开(公告)日：2004-01-21
申请号：EP03015605.3
申请日：2003-07-15
发明人： Ji, Bing , Motika, Stephen Andrew , Pearlstein, Ronald Martin , Karwacki, Eugene Joseph Jr. , Wu, Dingjun
CPC分类号： C23C16/4405 , B08B7/00 , B08B7/0035
摘要： A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.
摘要翻译： 一种用于从用于蚀刻和/或清洁应用一个基板除去的物质的过程中盘游离缺失。 在一个，实施例提供了一种处理用于去除具有由与反应剂确实包含选自含卤素的化合物的至少一员，硼使下物质比从基板二氧化硅的介电常数更高的物质 含化合物，化合物含氢，含氮化合物，螯合化合物，含碳化合物，氯硅烷，一hydrochlorosilane，或在有机氯硅烷以形成挥发性产物，并从衬底去除挥发性产物，由此除去 从基板上的物质。
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9.发明授权Method to protect internal components of semiconductor processing equipment 有权保护内部元件在植物中用于治疗的半导体的方法。
公开(公告)号：EP1637626B1
公开(公告)日：2008-12-17
申请号：EP05017851.6
申请日：2005-08-17
发明人： Ji, Bing , Motika, Stephen Andrew , Wu, Dingjun , Karwacki, Eugene Joseph, Jr. , Roberts, David Allen
IPC分类号： C23C16/44
CPC分类号： H01J37/32495 , B01J2219/024 , C23C16/4404
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10.发明公开Method and process for reactive gas cleaning of tool parts 审中-公开Verfahren zum Reaktivgasreinigen von Apparatebauteilen
公开(公告)号：EP1724374A1
公开(公告)日：2006-11-22
申请号：EP06009536.1
申请日：2006-05-09
IPC分类号： C23C16/44
CPC分类号： C23C16/4405 , B08B7/00 , B08B7/0035 , C23C14/564
摘要： This invention relates to an improvement in the cleaning of contaminated tool parts having a coating of unwanted residue formed in a semiconductor deposition chamber. In this process, the contaminated parts to be cleaned are removed from the semiconductor deposition chamber and placed in a reaction chamber off-line from the semiconductor reactor deposition chamber, i.e. on off-line gas reaction chamber. The coating of residue on the contaminated parts is removed in an off-line reactor by contacting the contaminated parts with a reactive gas under conditions for converting the residue to a volatile species while in said off-line reactor and then removing the volatile species from said off-line gas reaction chamber.
摘要翻译： 本发明涉及在半导体淀积室中形成的具有不想要的残留物的涂层的污染的工具部件的清洁的改进。 在这个过程中，待清洁的被污染的部分被从半导体淀积室中取出，并且从反应室离开半导体反应堆沉积室即离线气体反应室离开反应室。 在离线反应器中，通过使污染部分与反应性气体接触，在残留物转化成挥发性物质的条件下，在离型反应器中除去污染部分上的残余物涂层，然后从所述离子反应器中除去挥发性物质 离线气体反应室。
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